MJE13003-H_15 [UTC]
NPN SILICON POWER TRANSISTOR;型号: | MJE13003-H_15 |
厂家: | Unisonic Technologies |
描述: | NPN SILICON POWER TRANSISTOR |
文件: | 总8页 (文件大小:378K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13003-H
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 900V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen-Free
1
B
E
B
B
E
E
E
E
E
E
B
B
B
B
2
3
E
B
E
E
B
B
B
B
B
B
E
E
E
E
MJE13003L-H-x-T60-K
MJE13003L-H-x-T6C-A-K
MJE13003L-H-x-T6C-K
MJE13003L-H-x-T6S-K
MJE13003L-H-x-T92-B
MJE13003L-H-x-T92-K
MJE13003L-H-x-T92-R
MJE13003L-H-x-T9N-B
MJE13003L-H-x-T9N-K
MJE13003L-H-x- T9N-R
MJE13003L-H-x-TA3-T
MJE13003L-H-x-TM3-T
MJE13003L-H-x-TN3-R
MJE13003L-H-x-TN3-T
MJE13003G-H-x-T60-K
MJE13003G-H--x-T6C-A-K
MJE13003G-H-x-T6C-K
MJE13003G-H-x-T6S-K
MJE13003G-H-x-T92-B
MJE13003G-H-x-T92-K
MJE13003G-H-x-T92-R
MJE13003G-H-x-T9N-B
MJE13003G-H-x- T9N-K
MJE13003G-H-x- T9N-R
MJE13003G-H-x-TA3-T
MJE13003G-H-x-TM3-T
MJE13003G-H-x-TN3-R
MJE13003G-H-x-TN3-T
TO-126
TO-126C
TO-126C
TO-126S
TO-92
C
C
C
C
C
C
C
C
C
C
C
C
C
C
Bulk
Bulk
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92
Tape Reel
Tape Box
Bulk
TO-92NL
TO-92NL
TO-92NL
TO-220
TO-251
TO-252
TO-252
Tape Reel
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
400
900
9
UNIT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
VCEO(SUS)
VCBO
VEBO
IC
V
V
V
Continuous
Peak (1)
1.5
Collector Current
Base Current
A
A
ICM
3
Continuous
Peak (1)
IB
0.75
1.5
IBM
Continuous
Peak (1)
IE
2.25
4.5
Emitter Current
A
IEM
TO-126 / TO-126C
TO-126S
1.4
W
TA=25°C TO-92 / TO-92NL
TO-220
1.1
2
W
W
W
TO-251 / TO-252
TO-126 / TO-126C
TO-126S
1.56
Power Dissipation
PD
20
W
TO-92 / TO-92NL
TO-220
1.5
40
W
W
W
°C
°C
TC=25°C
TO-251 / TO-252
25
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
400
V
TC=25°C
1
5
1
V
V
CEO=Rated Value,
BE(OFF)=1.5 V
Collector Cutoff Current
ICEO
IEBO
mA
mA
TC=100°C
Emitter Cutoff Current
VEB=9V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Is/b
See Fig.5
See Fig.6
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
RBSOA
hFE1
hFE2
IC=0.3A, VCE=5V
14
5
57
30
DC Current Gain
IC=1A, VCE=5V
IC=0.5A, IB=0.1A
0.5
1
IC=1A, IB=0.25A
Collector-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=1.5A, IB=0.5A
3
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
1
1
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=0.25A
1.2
1.1
IC=1A, IB=0.25A, TC=100°C
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
10
21
MHz
pF
COB
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
tR
tS
tF
0.05 0.1 μs
Rise Time
0.5
2
1
4
μs
μs
VCC=125V, IC=1A, B1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
Storage Time
Fall Time
0.4 0.7 μs
Inductive Load, Clamped (Table 1)
Storage Time
tSTG
tC
1.7
0.29 0.75 μs
0.15 μs
4
μs
IC=1A, VCLAMP=300V, IB1=0.2A,
Crossover Time
VBE(OFF)=5VDC, TC=100°C
Fall Time
tF
Note: Pulse Test: PW=300μs, Duty Cycle≤2%
CLASSIFICATION OF hFE1
RANK
A
B
C
D
E
F
G
H
RANGE
14 ~ 22
21 ~ 27
26 ~ 32
31 ~ 37
36 ~ 42
41 ~ 47
46 ~ 52
51 ~ 57
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NPN SILICON TRANSISTOR
APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
Resistive
Switching
+125V
Rc
TUT
SCOPE
RB
D1
-4.0V
Coil Data :
CC=20V
Ferroxcube core #6656
CLAMP=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
LCOIL=50mH
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
V
V
RC=47Ω
Output Waveforms
+10.3 V
0
25μS
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
ICPK
Tc
(°C)
tsv
(μs)
tRV
(μs)
Ic
(A)
tFI
(μs)
tTI
(μs)
tc
(μs)
VCLAMP
90% Ic
tFI
90% Vclamp
tRV
tTI
IC
0.35
0.40
tsv
0.30
0.30
0.30
0.36
1.3 0.23
1.6 0.26
25
100
0.5
1
tc
25
1.5 0.10 0.14 0.05 0.16
100 1.7 0.13 0.26 0.06 0.29
VCE
IB
10% V
CLAMP 10%
ICPK
2% Ic
90% IB1
0.10 0.05 0.16
0.22 0.08 0.28
1.8 0.07
0.08
25
100
1.5
3
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
Time
Fig.1 Inductive Switching Measurements
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SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
t
t
SV = Voltage Storage Time, 90% IB1 to 10% VCLAMP
RV = Voltage Rise Time, 10 ~ 90% VCLAMP
tFI= Current Fall Time, 90 ~ 10% IC
TI = Current Tail, 10 ~ 2% IC
t
tC = Crossover Time, 10% VCLAMP to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
10
7
2
Vcc=125V
Ic/IB=5
TJ=25°C
ts
Vcc=125V
Ic/IB=5
TJ=25°C
1
5
0.7
0.5
3
2
tR
0.3
0.2
1
0.7
tD @ VBE(OFF)=5V
0.1
0.07
0.05
0.5
tF
0.3
0.2
0.03
0.02
0.1
0.07 0.1
0.2 0.3
0.7
20
0.2
0.3
0.02
0.03 0.05
0.5
10
0.03
0.05
0.07 0.1
0.5 0.7
1
2
0.02
Collector Current, IC (A)
Fig.2 Turn-On Time
Collector Current, IC (A)
Fig.3 Turn-Off Time
Fig.4 Thermal Response
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SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig.5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Fig.5.
TJ(PK) may be calculated from the data in Fig.4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as RBSOA( Reverse Bias
Safe Operating Area) and represents the voltage-current conditions during reverse biased turn-off. This rating is
verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.6 gives RBSOA
characteristics.
The Safe Operating Area of Fig.5 and 6 are specified ratings (for these devices under the test conditions shown.)
Fig.5 Active Region Safe Operating Area
Fig.6 Reverse Bias Safe Operating Area
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TYPICAL CHARACTERISTICS
DC Current Gain
Collector Saturation Region
TJ=25°C
80
2
60
TJ=150°C
25°C
1.6
40
30
Ic=0.1A
1.2
0.8
0.4
0
0.3A
0.5A
1A 1.5A
20
-55°C
1
0
8
VCE=2V
- - - - - -VCE=5V
6
4
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7
0.05 0.1 0.2
0.5
1
2
0.002
0.005 0.01 0.02
1
2
0.02
Collector Current,IC (A)
Base Current, IB (A)
Base-Emitter Voltage
Collector-Emitter Saturation Region
1.4
1.2
0.35
0.3
VBE(SAT) @ IC/IB=3
- - - - - -VBE(ON) @ VCE=2V
0.25
0.2
Ic/IB=3
1
0.8
0.6
TJ=-55°C
25°C
TJ=-55°C
0.15
0.1
25°C
25°C
150°C
150°C
0.05
0.4
0
0.02
0.03
0.07 0.1
0.2 0.3
0.5 0.7
1
0.03
0.2 0.3
0.5 0.7
1
2
0.05
2
0.05
0.07 0.1
0.02
Collector Current,IC (A)
Collector Current, IC (A)
Collector cut-off Region
Capacitance
4
10
500
VCE=250V
TJ=150°C
300
200
TJ=25°C
3
10
CIB
100
70
2
125°C
100°C
10
50
1
10
30
20
75°C
50°C
0
10
COB
10
25°C
7
5
FORWARD
+0.2
+0.4
REVERSE
-1
10
-0.4
2
200 500 1000
100
0
0.2
0.5
1
5
10 20 50
-0.2
+0.6
0.1
Base-Emitter Voltage, VBE (V)
Reverse Voltage, VR (V)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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