MJE13003B(TO-220) [UTC]
Transistor;
| 型号： | MJE13003B(TO-220) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high–voltage,
high–speed power switching inductive circuits where fall time
is critical. They are particularly suited for 115 and 220V
SWITCHMODE .
1
FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100℃
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃
. . . tc @ 1A, 100℃ is 290 ns (Typ)
* 700V Blocking Capability
* SOA and Switching Applications Information
TO-220
APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
400
UNIT
Collector-Emitter Voltage
VCEO (sus)
V
V
V
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak (1)
VCEV
VEBO
Ic
ICM
IB
IBM
IE
IEM
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
A
A
A
Base Current －Continuous
－Peak (1)
Emitter Current －Continuous
－Peak (1)
Total Power Dissipation @ Ta=25℃
Derate above 25℃
Total Power Dissipation @ TC=25℃
Derate above 25℃
Operating and Storage Junction Temperature Range
W
PD
mW/℃
11.2
40
320
W
PD
mW/℃
℃
Tj , Tstg
-65 ~ +150
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RθJA
RθJC
RATINGS
89
UNIT
℃/W
℃/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
(1) Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
3.12
℃
TL
275
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise noted)
PARAMETER
*OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining
Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Ic=10 mA , IB=0
VCEO (SUS)
400
V
Collector Cutoff Current
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value, VBE(off)=1.5V,
Tc=100℃
1
5
ICEV
IEBO
mA
mA
Emitter Cutoff Current
VEB=9 V, Ic=0
1
SECOND BREAKDOWN
Second Breakdown Collector
Current with bass forward biased
Clamped Inductive SOA with base
reverse biased
Is/b
See Figure 5
See Figure 6
RBSOA
*ON CHARACTERISTICS (1)
DC Current Gain
HFE1
HFE2
Ic=0.5A, VCE=10V
Ic=1A, VCE=2V
8
5
40
25
0.5
1
Collector-Emitter Saturation
Voltage
Ic=0.5A, IB=0.1A
Ic=1A, IB=0.25A
VCE (sat)
V
V
Ic=1.5A, IB=0.5A
3
Ic=1A, IB=0.25A, Tc=100℃
1
Base-Emitter Saturation Voltage
Ic=0.5A, IB=0.1A
1
1.2
1.1
VBE (sat)
Ic=1A, IB=0.25A
Ic=1A, IB=0.25A, Tc=100℃
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
fT
Cob
Ic=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
10
21
MHz
pF
μs
μs
μs
μs
td
tr
ts
tf
Vcc=125V, Ic=1A, IB1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
0.05
0.5
2
0.1
1
4
0.4
0.7
Inductive Load, Clamped (Table 1, Figure 7)
μs
μs
μs
Storage Time
Crossover Time
Fall Time
tsv
tc
tfi
Ic=1A, Vclamp=300V, IB1=0.2A,
1.7
0.29 0.75
0.15
4
VBE(off)=5Vdc, Tc=100℃
(1) Pulse Test : PW=300μs, Duty Cycle≤2%
CLASSIFICATION OF HFE1
RANK
A
B
C
D
E
F
RANGE
8 ~ 16
15 ~ 21
20 ~ 26
25 ~ 31
30 ~ 36
35 ~ 40
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
TABLE 1.TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITHCING
+5V
Vcc
33
1N4933
MJE210
L
MR826*
0.001μF
+125V
33 1N4933
5V
Vclamp
Rc
Ic
Pw
2N2222
RB
TUT
1k
1k
+5V
DUTY CYCLE≦10%
SCOPE
RB
D1
-4.0V
68
*SELECTED FOR≡1kV
tr, tf≦10ns
IB
5.1k
51
VCE
1k
T.U.T.
1N4933
270
2N2905
47
MJE200
0.02μF
100
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1/2W
-VBE(off)
Vcc=125V
Coil Data :
GAP for 30 mH/2 A
Lcoil=50mH
Vcc=20V
Vclamp=300V
Rc=125Ω
Ferroxcube core #6656
D1=1N5820 or
Full Bobbin ( ~ 200 Turns) #20
Equiv.
RB=47Ω
OUTPUT WAVEFORMS
tf CLAMPED
+10.3 V
0
25μS
Ic
Ic(pk)
t1 Adjusted to
Obtain Ic
t
t1
tf
-8.5V
Test Equipment
Scope-Tektronics
475 or Equivalent
Lcoil(Icpk)
Vcc
t1≒
tr, tf<10ns
VCE
Duty Cycly=1.0%
VCE or
RB and Rc adjusted
for desired IB and Ic
Lcoil(Icpk)
Vclamp
Vclamp
t2≒
t
TIME
t2
Table 2. Typical Inductive Switching Performance
Figure 1. Inductive Switching Measurements
ICPK
Ic
Tc
℃
tsv
Vclamp
trv
tfi
tti
tc
AMP
μs
μs
μs
μs
μs
90% Ic
tfi
90% Vclamp
trv
tsv
tti
IC
0.35
0.40
1.3
1.6
0.23 0.30
0.26 0.30
0.30
0.36
25
100
0.5
1
tc
10% Vclamp
25
100
1.5
1.7
0.10
0.13
0.14 0.05 0.16
0.26 0.06 0.29
VCE
IB
10%
Icpk
2% Ic
90% IB1
0.10 0.05 0.16
0.22 0.08 0.28
1.8
3
0.07
0.08
25
100
1.5
NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1
TIME
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 ~ 90% Vclamp
tfi = Current Fall Time, 90 ~ 10% IC
tti = Current Tail, 10 ~ 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these
terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ≈ tc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25℃ and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are
guaranteed at 100℃.
RESISTIVE SWITCHING PERFORMANCE
Figure 2. Turn-On Time
Figure 3. Turn-Off Time
ts
10
7
5
2
Vcc=125V
Ic/IB=5
Vcc=125V
Ic/IB=5
Tj=25℃
1
0.7
0.5
Tj=25℃
3
2
tr
0.3
0.2
1
0.7
td @ VBE(off)=5V
0.1
0.07
0.05
0.5
tf
0.3
0.2
0.03
0.02
0.1
0.07 0.1
0.2 0.3
0.7
20
0.3
0.02 0.03 0.05
0.5
10
0.03
0.07 0.1
0.05
0.2
0.5 0.7
1
2
0.02
COLLECTOR CURRENT, IC (AMP)
COLLECTOR CURRENT, IC (AMP)
Figure 4. Thermal Response
1
0.7
0.5
D=0.5
0.2
0.3
0.2
0.1
0.05
P (PK)
0.1
ZθJC(t)=r(t) RθJC
RθJC=3.12℃/W MAX
0.07
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
t1 t2
0.03
0.02
TJ(pk)-TC=P(pk) PθJC(t)
0.01
DUTY CYCLE, D=t1/t2
SINGLE PULSE
0.01
0.01
10
0
20
0
50
0
0.05
0.1
0.2
1
2
3
5
10 20
0.02 0.03
0.3
0.5
50
1000
TIME OR PULSE WIDTH, t (ms)
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
The Safe Operating Area Figures 5 and 6 are specified ratings
The Safe Operating Area Figures 5 and 6 are specified ratings for these devices under the test conditions shown.
Figure 5. Active Region Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
10
5
1.6
1.2
10 ms
2
1
100μs
5.0 ms
VBE(off)=9V
Tj≦100℃
dc
0.5
1.0 ms
Tc=25℃
0.8
0.4
0
IB1=1A
0.2
0.1
THERMAL LIMIT(SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.05
5V
0.02
0.01
3V
1.5V
10
20
50
100
500
400
600
700
800
5
200 300
0
100
200
300
500
COLLECTOR-EMITTER VOLTAGE, VCE (VOLTS)
Figure 7. Forward Bias Power Derating
COLLECTOR-EMITTER CLAMP VOLTAGE
,VCE (VOLTS)
1
0.8
0.6
0.4
0.2
0
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
100
140
160
20
40
60
80
120
CASE TEMPERATURE, TC (℃)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TC = 25℃; Tj(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25℃. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any
case temperature by using the appropriate curve on Figure 7.
TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
5
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
Tj=25℃
80
2
1.6
1.2
0.8
0.4
0
60
Tj=150℃
40
30
25℃
Ic=0.1A
0.3A
0.5A
1A 1.5A
20
-55℃
1
0
8
VCE=2V
6
4
- - - - - -VCE=5V
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7
0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0.02
1
2
1
2
COLLECTOR CURRENT,IC (AMP)
BASE CURRENT, IB (AMP)
Figure 10. Base-Emitter Voltage
Figure 11. Collector-Emitter Saturation Region
1.4
1.2
0.35
0.3
VBE(sat) @ IC/IB=3
- - - - - -VBE(on) @ VCE=2V
0.25
0.2
Ic/IB=3
1
0.8
0.6
0.4
Tj=-55℃
25℃
Tj=-55℃
0.15
25℃
0.1
25℃
150℃
150℃
0.05
0
0.02
0.5
0.7
0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
0.03 0.05 0.07 0.1
0.2 0.3
1
2
0.02
2
COLLECTOR CURRENT,IC (AMP)
COLLECTOR CURRENT, IC (AMP)
Figure 13. Capacitance
Figure 12. Collector Cutoff Region
4
10
500
VCE=250V
300
200
Tj=25℃
3
10
Cib
Tj=150℃
125℃
100℃
100
70
50
2
10
1
10
30
20
75℃
50℃
0
10
Cob
10
25℃
7
5
FORWARD
+0.2 +0.4
-1
REVERSE
10
2
200 500 1000
100
-0.2
0
0.2 0.5
0.1
1
5
10 20 50
-0.4
+0.6
BASE-EMITTER VOLTAGE, VBE (VOLTS)
REVERSE VOLTAGE, VR (VOLTS)
6
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
UTC MJE13003
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
7
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R203-017,D
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