MJE13003DG-T92-K [UTC]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR;型号: | MJE13003DG-T92-K |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压 开关 |
文件: | 总4页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13003D
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13003D is a NPN Power Transistor. It is
intended to be used in applications requiring medium voltage
capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capability
* Dynamic Parameters With Low Spread
* High Reliability
* Integrated Antiparallel Collector-Emitter Diode
INTERNAL SCHEMATIC DIAGRAM
C (2)
B (1)
E (3)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
B
B
B
2
C
C
C
C
C
3
E
E
E
E
E
MJE13003DL-T60-K
MJE13003DL-T92-B
MJE13003DL-T92-K
MJE13003DL-T92-R
MJE13003DL-TA3-T
MJE13003DG-T60-K
MJE13003DG-T92-B
MJE13003DG-T92-K
MJE13003DG-T92-R
MJE13003DG-TA3-T
TO-126
TO-92
TO-92
TO-92
TO-220
Bulk
Tape Box
Bulk
Tape Reel
Tube
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MJE13003D
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Collector- Emitter Voltage (VBE =0)
Collector-Emitter Voltage (IB =0)
Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS)
Collector Current
VCES
VCEO
VEBO
IC
700
400
V
9
1.5
V
A
Collector Peak Current (tP<5ms)
Base Current
ICM
3
A
IB
0.75
1.5
A
Base Peak Current (tP<5ms)
TO-126
IBM
A
40
Power Dissipation (TC=25°C)
TO-92
PD
30
W
TO-220
70
Junction Temperature
Storage Temperature
TJ
150
-55 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVEBO
TEST CONDITIONS
IE =10mA, IC=0
MIN TYP MAX UNIT
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage (Note)
Collector Cut-Off Current
9
18
V
V
VCEO(SUS) IC=10mA, IB=0
400
ICES
VCE =700V,VBE =0
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=1.5 A, IB=0.5 A
IC=0.5 A, IB=0.1 A
IC=1 A, IB=0.25 A
IC=0.5A, VCE =5 V
IC=1 A, VCE =5 V
VCC=125 V, IC=1 A,
IB1=0.2 A, IB2=-0.2 A
tP=25μs
1
0.5
1
mA
V
VCE(SAT)
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
V
3
V
1
V
VBE(SAT)
hFE
1.2
51
30
1
V
8
5
DC Current Gain
Rise Time
tR
tS
tF
μs
μs
μs
4
Resistive Load
Storage Time
Fall Time
0.7
IC=1 A, IB1=0.2 A,VBE =-5 V,
L=50mH, VCLAMP=300V
IF=0.5 A
tS
0.8
μs
Inductive Load Storage Time
Diode Forward Voltage
VF
1.5
V
Pulse Test: Pulse duration≤300μs, Duty cycle≤2 %
Note:
UNISONIC TECHNOLOGIES CO., LTD
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MJE13003D
Preliminary
NPN SILICON TRANSISTOR
TEST CIRCURTS
Inductive Load Switching Test Circuit
(3)
IC
(1)
VCE
IB
RBB(2)
VClamp
VCC
-
VBB
+
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
3. Fast Recovery Rectifier
Resistive Load Switching Test Circuit
IC
(1)
RC(2)
VCE
IB
RBB(2)
-
VBB
VCC
+
Notes: 1. Fast Electronic Switch
2. Non-Inductive Resistor
UNISONIC TECHNOLOGIES CO., LTD
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MJE13003D
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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