MJE13007_10 [UTC]
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS; NPN双极型功率晶体管开关电源的应用
| 型号： | MJE13007_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
| 文件： | 总6页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13007
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
DESCRIPTION
The UTC MJE13007 is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. It is
particularly suited for 115 and 220 V switch mode applications.
FEATURES
* VCEO(SUS) 400V
* 700V Blocking Capability
Lead-free:
MJE13007L
Halogen-free:MJE13007G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
MJE13007-TA3-T
MJE13007-TF3- T
MJE13007L-TA3-T MJE13007G-TA3-T
MJE13007L-TF3- T MJE13007G-TF3- T
TO-220
Tube
Tube
TO-220F
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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MJE13007
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCEO
VCBO
VEBO
IC
RATINGS
400
700
9.0
UNIT
V
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
V
V
Continuous
Peak (1)
8.0
A
Collector Current
Base Current
ICM
16
A
Continuous
Peak (1)
IB
4.0
A
IBM
8.0
A
Continuous
IE
12
A
A
Emitter Current
Peak (1)
IEM
PD
24
80
Total Device Dissipation
TC = 25°C
W
°C
Operating and Storage Junction Temperature
TJ, TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJC
RATINGS
1.56
UNIT
°C/W
°C/W
Junction to Case
Junction to Ambient
θJA
62.5
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(SUS) IC=10mA, IB=0
400
V
VCES=700V
ICBO
0.1
1.0
100
40
mA
mA
μA
VCES=700V, TC=125°C
IEBO
hFE1
hFE2
VEB=9.0V, IC=0
IC=2.0A, VCE=5.0V
8.0
5.0
DC Current Gain
IC=5.0A, VCE=5.0V
30
IC=2.0A, IB=0.4A
1.0
2.0
3.0
3.0
1.2
1.6
1.5
V
V
IC=5.0A, IB=1.0A
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=8.0A, IB=2.0A
V
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
V
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=5.0A, IB=1.0A
V
IC=5.0A, IB=1.0A, TC=100°C
IC=500mA, VCE=10V, f=1.0 MHz
VCB=10V, IE=0, f=0.1MHz
V
Current-Gain-Bandwidth Product
Output Capacitance
Resistive Load (Table 1)
Delay Time
fT
4.0
14
80
MHz
pF
Cob
tD
tR
tS
tF
0.025 0.1
μs
μs
μs
μs
V
CC=125V, IC=5.0A,
Rise Time
0.5
1.8
1.5
3.0
0.7
IB1=IB2=1.0A, tp=25μs,
Duty Cycle≤1.0%
Storage Time
Fall Time
0.23
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE
Figure1. Typical Thermal Response
1
0.7
0.5
D=0.5
D=0.2
0.2
0.1
RθJC(t)=r(t)RθJC
D=0.1
RθJC=1.56°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk)-TC=P(pk)RθJC (t)
P(pk)
t1
D=0.05
D=0.02
0.07
0.05
t2
0.02
0.01
D=0.01
DUTY CYCLE, D=t1/t2
SINGLE PULSE
0.1 0.2
0.5
1
5
0.01 0.02
0.05
2
10
20
50
100 200
500 10k
Time, t (msec)
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do
not debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any
case temperature by using the appropriate curve on Figure 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section.
UNISONIC TECHNOLOGIES CO., LTD
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MJE13007
NPN SILICON TRANSISTOR
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
Inductive
Switching
L=20mH
RB2=0
BVCEO (SUS)
RBSOA
L=500mH
RB2=0
CC=15Volts
L=10mH
RB2=8
V
CC=125V
RC=25Ω
D1=1N5820 OR EQUIV
V
VCC=15V
VCC=20V
RB1 selected
RB1 selected
IC(pk)=100mA
for desired IB1
for desired IB1
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Figure 2. Base-Emitter Saturation Voltage
IC/IB=5
Figure 3. Collector-Emitter Saturation Voltage
1.4
1.2
10
IC/IB=5
5
2
1
1
0.8
0.6
0.4
0.5
IC=-40°C
0.2
IC=-40°C
25°C
0.1
25°C
100°C
0.05
100°C
0.02
0.01
0.1 0.2 0.5
1
5
10
0.01 0.02 0.05
2
0.1 0.2 0.5
1
5
10
0.01 0.02 0.05
2
Collector Current, IC (A)
Collector Current, IC (A)
Figure 7. Maximum Forward Bias Safe
Operating Area
Figure 6. Capacitance
100
50
10000
1000
100
TJ=25°C
Extended SOA@1μs,10μs
20
10
Cib
1μs
10μs
5
2
1
TC=25°C
1ms
DC
5ms
Cob
0.5
0.2
0.1
0.05
Bonding wire limit
Thermal limit
Second breakdown limit
curves apply below
rated vceo
0.02
0.01
10
100
Reverse Voltage,VR (V)
30
5070 100 200
0.1
1
10
1000
20
500 1000
300
10
Collector-Emitter Voltage, VCE (V)
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MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Figure 8. Maximum Reverse Bias
Switching Safe Operating Area
Figure 9. Forward Bias Power Derating
10
8
1
SECOND
BREAKDOWN
DERATING
0.8
0.6
6
4
2
0
TC≤100°C
GAIN≥4
LC=500μH
THERMAL
DERATING
0.4
0.2
VBE(OFF)
-5V
-2V
0V
0
80 100 120 140
160
300 400 500 600
800
700
20 40
60
0 100 200
Collector-Emitter Clamp Voltage, VCEV (V)
Case Temperature, TC (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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