MJE13009L-XS-T47S-T [UTC]
Power Bipolar Transistor,;型号: | MJE13009L-XS-T47S-T |
厂家: | Unisonic Technologies |
描述: | Power Bipolar Transistor, |
文件: | 总3页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE13009-XS
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
1
TO-247S
DESCRIPTION
The MJE13009-XS is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
1
TO-220
FEATURES
* VCEO 400V and 300 V
*700 V Blocking Capability
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
MJE13009L-XS-TA3-T
MJE13009L-XS-T47S-T
MJE13009G-XS-TA3-T
MJE13009G-XS-T47S-T
TO-220
Tube
Tube
TO-247S
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MJE13009G-XS-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, T47: TO-247S
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
MJE13009
L: Lead Free
G: Halogen Free
Date Code
Lot Code
1
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 3
QW-R223-027.B
MJE13009-XS
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
VEBO
IC
RATINGS
UNIT
400
V
V
V
Collector-Emitter Voltage (VBE=-1.5V)
Emitter Base Voltage
700
9
Continuous
8
Collector Current
Power Dissipation
Derate above 25°C
A
Peak (Note 3)
TO-220
ICM
16
2
4.2
W
W
TO-247S
TO-220
PD
16
mW/°C
mW/°C
°C
TO-247S
33
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
°C
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220
TO-247S
TO-220
TO-247S
Junction to Ambient
Junction to Case
θJA
30
1.25
θJC
0.625
ELECTRICAL CHARACTERISTICS (TC= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VCEO
ICEV
IC = 10mA, IB = 0
400
V
VBE(OFF) = 1.5VDC
VBE(OFF) = 1.5VDC, TC = 100℃
VEB = 9VDC, IC = 0
1
5
1
mA
mA
VCBO=Rated Value
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS (Note)
hFE1
IC = 3A, VCE = 5V
IC = 8A, VCE = 5V
8
40
30
1
DC Current Gain
hFE 2
Current-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Output Capacitance
VCE(SAT) IC = 5A, IB = 1A
VBE(SAT) IC = 5A, IB = 1A
V
V
1.2
COB
VCB = 10V, IE = 0, f = 0.1MHz
100
0.06 0.1
pF
SWITCHING CHARACTERISTICS (Resistive Load, Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
tDLY
tR
µs
µs
µs
µs
VCC = 125Vdc, IC = 8A
IB1 = IB2 = 1.6A, tP = 25μs
Duty Cycle ≤1%
0.45
1.3
1
3
tS
tF
0.2
0.7
Inductive Load, Clamped (Table 1, Fig. 13)
Voltage Storage Time
tS
tC
IC=8A, VCLAMP=300V, IB1=1.6A
VBE(OFF) = 5V, TC = 100℃
0.92 2.3
0.12 0.7
µs
µs
Crossover Time
Note: Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R223-027.B
MJE13009-XS
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
vs.
itter Saturation Voltage
lector
Gain vs. Col
Current
Base-Em
IC/IB=5
DC Current
Collector
Current
50
45
1.4
1.2
VCE=5V
TA=125°C
40
35
30
25
20
15
10
1
0.8
0.6
0.4
0.2
0
75°C
25°C
TA=25°C
125°C
75°C
0.1
5
0
0.01
1
10
0.001
0.01
0.1
10
1
rrent, I (A)
Collector Cu
rrent, I (A)
Collector Cu
C
C
Collector-Emitter Saturation Voltage vs.
Collector Current
1.6
1.2
0.8
0.4
0
IC/IB=5
TA=125°C
75°C
25°C
0.01
0.1
1
10
Collector Current, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R223-027.B
相关型号:
MJE13009LEADFREE
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CENTRAL
MJE13009N
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
MJE13009S
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
MJE13009U
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明