MJE13011 [UTC]
HIGH VOLTAGE HIGH SPEED SWITCHING; 高电压高开关速度
| 型号： | MJE13011 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE HIGH SPEED SWITCHING |
| 文件： | 总4页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
ꢀ
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-220F
*Pb-free plating product number: MJE13011L
ꢀ
PIN CONFIGURATION
PIN NO.
PIN NAME
BASE
1
2
3
COLLECTOR
EMITTER
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tube
Normal
Lead Free Plating
MJE13011-TF3-T MJE13011L-TF3-T TO-220F
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD
1 of 4
QW-R219-006,B
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
IC
RATINGS
UNIT
V
Collector Base Voltage
450
400
V
Collector Emitter Voltage
400
V
Emitter Base Voltage
Collector Current
7
V
10
3
A
Base Current
IB
A
Power Dissipation
Junction Temperature
Storage Temperature
PD
80
W
℃
℃
TJ
+150
-40 ~ +150
TSTG
ꢀ
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified.)
PARAMETER
SYMBOL
VCBO
TEST CONDITIONS
ICBO=1mA
ICEO=10mA
MIN TYP MAX UNIT
Collector Base Voltage
450
400
400
7
V
V
VCEO
Collector Emitter Voltage
VCEO (SUS) IC=1A
V
Emitter Base Voltage
VEBO
VCE (SAT)
VBE (SAT)
ICBO
IEBO=0.1mA
V
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
1.2
1.5
1.0
0.1
V
IC=4A, IB=0.8A
V
VCBO=450V
VEBO=7V
mA
mA
IEBO
DC Current Gain
hFE
IC=4A, VCE=5V
10
tON
1.0
2.0
1.0
µs
µs
µs
IC=7.5A, IB1=-IB2=1.5A
RL=20Ω, Pw=20µs, Duty ≤ 2%
Switching Time
tSTG
tF
ꢀ
CLASSIFICATION of hFE
RANK
A
B
C
D
E
F
RANGE
10 ~ 16
15 ~ 21
20 ~ 26
25 ~ 31
30 ~ 36
35 ~ 40
ꢀ
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
θJC
RATINGS
UNIT
℃/W
4
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R219-006,B
www.unisonic.com.tw
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
SWITCHING TIME TEST CIRCUIT
RL=20Ω
IB1
IB2
IB1
IB2
IC
0.9IC
IC
0.1IC
PW=20μs
tON
tSTG
tF
UNISONIC TECHNOLOGIES CO., LTD
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QW-R219-006,B
www.unisonic.com.tw
MJE13011
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Collector Output Characteristics
DC Current Gain
14
12
10
300
200
TC=25℃
VCE=5V
A
m
0
0
9
100
A
m
0
0
7
TC=120℃
50
30
A
m
0
0
5
8
25℃
300mA
200mA
-20℃
-40℃
6
4
10
5
3
IB =100mA
2
0
1
0
2
4
6
8
10
12
14
0.03 0.05 0.1
0.3 0.5
1
3
5
10
Collector Current, IC (A)
Safe Operating Area
CollectorEmitter Voltage, VCE (V)
Base and Collector Saturation Voltage
30
3
TC=25℃
IC=5IB
TC=25℃
Single Pulse
50μs
100μs
200μs
500μs
10
VBE(SAT)
1
5
3
0.5
0.3
1
VCE(SAT)
0.5
0.3
0.1
PW=1ms
0.05
0.03
0.1
0.05
0.03
0.01
0.03 0.05 0.1
0.3 0.5
1
3
5
10
1
3
5
10
30 50 100
300 500
Collector Emitter Voltage, VCE (V)
Collector Current, IC (A)
Switching Time
3
1
TC=25℃
IC=5IB1 =5IB2
t
STG
tON
0.5
0.3
tF
0.1
0.3
0.5
1
3
5
10
CollectorCurrent, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R219-006,B
www.unisonic.com.tw
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