MJE3055TL-TN3-T [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | MJE3055TL-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MJE3055T
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
ꢀ
DESCRIPTION
1
TO- 251
The UTC MJE3055T is designed for general purpose of amplifier
and switching applications.
1
TO-252
1
TO-220
*Pb-free plating product number:MJE3055TL
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
B
B
2
C
C
C
C
3
E
E
E
E
MJE3055T-TA3-T
MJE3055T-TM3-T
MJE3055T-TN3-R
MJE3055T-TN3-T
MJE3055TL-TA3-T
MJE3055TL-TM3-T
MJE3055TL-TN3-R
MJE3055TL-TN3-T
TO-220
TO-251
TO-252
TO-252
Tube
Tube
Tape Reel
Tube
MJE3055TL-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
1 of 2
Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-011,B
MJE3055T
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (T
(Operating temperature range applies unless otherwise specified)
PARAMETER SYMBOL
c=25℃)
RATINGS
UNIT
V
Collector-Base Voltage
VCBO
VCEO
VEBO
70
60
5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
TO-220
75
20
10
6
W
W
A
Total Power Dissipation
PD
TO-251/TO-252
Collector Current
Base Current
IC
IB
A
Junction Temperature
Storage Temperature
TJ
150
℃
℃
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN
60
70
5
TYP
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCEO IC=200mA
BVCBO IC=10mA
BVEBO IE=10mA
V
V
ICBO
ICEO
ICEX
IEBO
VCB=70V
1
700
1
mA
µA
mA
Collector Cut-off Current
VCE=30V
VCE=70V, VEB(OFF)=1.5V
Emitter Cut-off Current
VEB=5V
5
mA
VCE(SAT)1 IC=4A, IB=0.4A
VCE(SAT)2 IC=10A, IB=3.3A
VBE(ON) VCE=4V, IC=4A
1.1
8
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Gain
V
V
1.8
hFE1
hFE2
fT
IC=4A, VCE=4V
IC=4A, VCE=10V
20
5
100
Current Gain Bandwidth Product
VCE=10V, IC=0.5A, f=1MHz
2
MHZ
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R203-011,B
www.unisonic.com.tw
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