MMBT1616 [UTC]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | MMBT1616 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT1616/A
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
3
ꢀ
DESCRIPTION
* Audio frequency power amplifier
* Medium speed switching
1
2
SOT-23
*Pb-free plating product number:
MMBT1616L/MMBT16AL
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
E
E
2
B
B
3
C
C
MMBT1616-x-AE3-R
MMBT1616A-x-AE3-R
MMBT1616L-x-AE3-R
MMBT1616AL-x-AE3-R
SOT-23
SOT-23
Tape Reel
Tape Reel
MMBT1616L-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(1) R: Tape Reel
(2) AE3: SOT-23
(3) x: refer to Classification of h
FE1
(4) L: Lead Free Plating, Blank: Pb/Sn
(4)Lead Plating
ꢀ
MARKING
UTC MMBT1616
UTC MMBT1616A
16A
16
Lead Plating
Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-036.B
MMBT1616/A
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
1616
60
Collector-Base Voltage
1616A
1616
120
V
50
V
Collector-Emitter Voltage
Emitter to Base Voltage
Collector Current
VCEO
1616A
60
V
VEBO
IC
6
V
DC
1
2
A
Pulse*
IC
A
Total Power Dissipation (Ta=25
Junction Temperature
℃
)
PC
350
mW
℃
℃
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note (*) Pulse width≤10ms, Duty cycle<50%
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=60V
VEB= 6V
MIN
TYP
MAX
100
100
0.3
UNIT
nA
nA
V
Collector Cut-Off Current
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
VCE(SAT) IC=1A, IB=50mA
VBE(SAT) IC=1A, IB=50mA
0.15
0.9
1.2
V
VBE(ON)
VCE=2V, IC=50mA
600
135
135
81
640
700
600
400
mV
hFE1
VCE=2V, IC=100mA
DC Current Gain
hFE2
fT
VCE=2V, IC=1A
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
IB1=-IB2=10mA
100
160
MHz
pF
us
Cob
tON
tS
19
0.07
0.95
0.07
Storage Time
us
Fall Time
tF
VBE(OFF)=-2 ~ -3V
us
ꢀ
CLASSIFICATION OF hFE1
RANK
hFE1
Y
G
L
135-270
200-400
300-600
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-036.B
www.unisonic.com.tw
MMBT1616/A
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Collector Output Capacitance
1000
Current Gain-Bandwidth Product
VCE=2V
1000
IE=0
f=1.0MHz
500
500
300
300
100
100
50
30
50
30
10
10
5
3
5
3
1
1
3
5
10
30 50 100 300
0.01 0.03 0.1 0.3
1
3 5 10
Collector Curren,t IC(A)
Collector-Base Voltage, VCB (V)
Switching Time
Static Characteristic
10
100
80
VCC=10V
IC=10·IB1=-10·IB2
5
3
IB=300µA
IB=250µA
IB=200µA
1
60
40
20
0.5
0.3
tStG
IB=150µA
IB=100µA
0.1
tF
0.05
0.03
tON
IB=50µA
8 10
0.01
0.030.05
0.001 0.003 0.01
0.1 0.3 0.5 1
0
2
4
6
Collector Current, IC (A)
Collector-Emitter Voltage, VCE (V)
Static Characteristic
DC Current Gain
VCE=2V
1.0
0.8
IB=5.0mA
IB=4.5mA
A
IB=3.5mA
m
1000
0
IB=3.0mA
.
4
=
B
I
500
300
IB=2.5mA
IB=2.0mA
IB=1.5mA
IB=1.0mA
IB=0.5mA
100
0.6
0.4
0.3
50
30
10
5
3
0
0.2
0.4
0.8 1.0
1
0.6
0.01 0.030.050.1 0.3 0.5
1
3 5 10
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-036.B
www.unisonic.com.tw
MMBT1616/A
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Safe Operating Area
10
1000
IC=20·IB
500
300
5
3
W
VBE(sat)
100
1
0.5
0.3
50
30
D
C
10
0.1
VCE(sat)
5
0.05
0.03
3
1
0.01
1
3
5
10
30 50 100 300
0.01 0.030.050.1 0.30.5 1
Collector Current, IC (A)
3 5 10
Collector-Emitter Voltage, VCE (V)
Power Derating
0.8
0.6
0.4
0.2
0
25 50 75 100 125150 175200
Ambient Temperature, TA (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-036.B
www.unisonic.com.tw
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