MMBT1815G-X-AL3-R [UTC]
HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR; 高频NPN晶体管放大器
| 型号： | MMBT1815G-X-AL3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT1815
NPN SILICON TRANSISTOR
HIGH FREQUENCY NPN
AMPLIFIER TRANSISTOR
FEATURES
* Collector-Emitter Voltage: BVCEO=50V
* Collector Current up to 150mA
* High hFE Linearity
* Complement to MMBT1015
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
E
E
E
2
B
B
B
B
B
3
C
C
C
C
C
MMBT1815L-x-AC3-R
MMBT1815L-x-AE3-R
MMBT1815L-x-AL3-R
MMBT1815L-x-AN3-R
MMBT1815L-x-AQ3-R
MMBT1815G-x-AC3-R
MMBT1815G-x-AE3-R
MMBT1815G-x-AL3-R
MMBT1815G-x-AN3-R
MMBT1815G-x-AQ3-R
SOT-113
SOT-23
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
SOT-323
SOT-523
SOT-723
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R206-014,K
MMBT1815
NPN SILICON TRANSISTOR
MARKING
PACKAGE
MARKING
GR
Y
BL
SOT-23
C4Y
C4G
C4
C
C4B
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
L: Lead Free
G: Halogen Free
SOT-113
SOT-323
SOT-523
L: Lead Free
G: Halogen Free
SOT-723
L: Lead Free
G: Halogen Free
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R206-014,K
www.unisonic.com.tw
MMBT1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
RATINGS
60
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
VCEO
50
VEBO
5
SOT-23
250
200
190
150
50
Collector Dissipation
(TA=25°C)
SOT-523/SOT-113/SOT-323
SOT-723
PC
mW
Collector Current
Base Current
IC
IB
mA
mA
°С
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC = 100μA, IE = 0
IC = 10mA, IB = 0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
50
50
5
V
V
BVCEO
BVEBO
IE = 10μA, IC = 0
V
VCE(SAT) IC = 100mA, IB = 10mA
VBE(SAT) IC = 100mA, IB = 10mA
0.1
0.25
1.0
V
V
ICBO
IEBO
hFE1
hFE2
fT
VCB = 60V, IE = 0
100
100
700
nA
nA
Emitter Cut-off Current
VEB = 5V, IC = 0
VCE = 6V, IC = 2mA
VCE = 6V, IC = 150mA
VCE = 10V,Ic = 50mA
VCB = 10V, IE = 0, f = 1MHz
IC = 0.1mA, VCE = 6V
RG = 10kΩ, f = 100Hz
120
25
DC Current Gain
Transition Frequency
Output Capacitance
80
MHz
pF
COB
2.0
1.0
3.0
1.0
Noise Figure
NF
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
350-700
RANGE
120-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-014,K
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MMBT1815
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Output Capacitance
3
2
10
10
VCE =6V
f=1MHz
IE =0
2
10
1
0
10
10
1
10
-1
10
0
10
0
1
2
3
-1
10
0
1
2
10
10
10
10
10
10
10
Collector Current, Ic (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-014,K
www.unisonic.com.tw
MMBT1815
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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