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MMBT4401L-AE3-R [UTC]

NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
MMBT4401L-AE3-R
型号： MMBT4401L-AE3-R
厂家： Unisonic Technologies    Unisonic Technologies
描述：

NPN GENERAL PURPOSE AMPLIFIER
NPN通用放大器

放大器
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UNISONIC TECHNOLOGIES CO., LTD  
MMBT4401  
NPN SILICON TRANSISTOR  
NPN GENERAL PURPOSE  
AMPLIFIER  
ꢀ
DESCRIPTION  
3
The UTC MMBT4401 is designed for use as a medium power  
amplifier and switch requiring collector currents up to 500mA.  
1
2
SOT-23  
*Pb-free plating product number: MMBT4401L  
ꢀ
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
SOT-23  
Normal  
Lead Free Plating  
1
2
3
MMBT4401-AE3-R  
MMBT4401L-AE3-R  
E
B
C
Tape Reel  
MMBT4401L-AE3-R  
(1) R: Tape Reel  
(2) AE3: SOT-23  
(1)Packing Type  
(2)Package Type  
(3)Lead Plating  
(3) L: Lead Free Plating, Blank: Pb/Sn  
ꢀ
MARKING  
2X  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R206-035,B  
MMBT4401  
NPN SILICON TRANSISTOR  
ꢀ
ABSOLUTE MAXIMUM RATING* (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
60  
40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6
V
Collector Current-Continuous  
Total Device Dissipation  
600  
mA  
mW  
350  
2.8  
PD  
Derate above 25  
℃
mW/  
℃
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
℃
TSTG  
℃
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty  
cycle operations.  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ꢀ
THERMAL DATA (Ta=25  
CHARACTERISTIC  
Thermal Resistance, Junction to Ambient  
ELECTRICAL CHARACTERISTICS (Ta=25  
PARAMETER SYMBOL  
℃, unless otherwise specified)  
SYMBOL  
RATING  
357  
UNIT  
/W  
℃
θJA  
ꢀ
℃
, unless otherwise specified)  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (note)  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO IC=0.1mA, IE=0  
BVCEO IC=1mA, IB=0  
BVEBO IE=0.1mA, IC=0  
60  
40  
6
V
V
V
ICEX  
IBL  
VCE=35V, VEB=0.4V  
VCE=35V, VEB=0.4V  
µA  
µA  
Base Cut-off Current  
ON CHARACTERISTICS (note)  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
VCE=1V, IC=0.1mA  
VCE=1V, IC=1mA  
VCE=1V, IC=10mA  
VCE=1V, IC=150mA  
VCE=2V, IC=500mA  
20  
40  
DC Current Gain  
80  
100  
40  
300  
V
CE(SAT1) IC=150mA, IB=15mA  
0.4  
0.75  
0.95  
1.2  
V
V
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(SAT2) IC=500mA, IB=50mA  
VBE(SAT1) IC=150mA, IB=15mA  
VBE(SAT2) IC=500mA, IB=50mA  
0.75  
SMALL SIGNAL CHARACTERISTICS1  
Current Gain Bandwidth Product  
Collector-Base Capacitance  
Emitter-Base Capacitance  
Input Impedance  
fT  
VCE=10V, IC=20mA, f=100MHz 250  
VCB=5V, IE=0, f=140kHz  
MHz  
pF  
Ccb  
Ceb  
hie  
hre  
hfe  
hoe  
6.5  
30  
15  
8
VBE=0.5V, IC=0, f=140kHz  
pF  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
1
0.1  
40  
1
kΩ  
×10-4  
Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
500  
30 µmhos  
SWITCHING CHARACTERISTICS  
V
CC=30V, VEB=2V  
Delay Time  
tD  
15  
ns  
IC=150mA IB1=15mA  
VCC=30V, VEB=2V  
IC=150mA IB1=15mA  
Rise Time  
Storage Time  
Fall Time  
tR  
tS  
tF  
20  
225  
30  
ns  
ns  
ns  
VCC=30V, IC=150mA  
IB1= IB2=15mA  
Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R206-035,B  
www.unisonic.com.tw  
MMBT4401  
NPN SILICON TRANSISTOR  
ꢀ
TEST CIRCUIT  
30V  
200Ω  
16V  
1KΩ  
0
≤220ns  
500Ω  
Figure1. Saturated Turn-On Switching Timer  
6V  
-1.5V  
1k  
37Ω  
Note:BVEBO=5V  
30V  
1KΩ  
50Ω  
0
≤220ns  
Figure2. Saturated Turn-Off Switching Timer  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R206-035,B  
www.unisonic.com.tw  
MMBT4401  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS  
Typical Pulsed Current Gain  
vs Collector Current  
Collector-Emitter Saturation Voltage  
vs Collector Current  
0.4  
0.3  
0.2  
500  
VCE =5V  
β=10  
400  
300  
200  
125℃  
125℃  
25℃  
25℃  
-40℃  
0.1  
100  
-40℃  
500  
100  
0
0.1 0.3  
3
10 30 100 300  
1
10  
1
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Base-Emitter Saturation Voltage  
vs Collector Current  
Base-Emitter On Voltage  
vs Collector Current  
1
0.8  
0.6  
β=10  
VCE =5V  
1
-40℃  
25℃  
-40℃  
0.8  
0.6  
25℃  
125℃  
125℃  
0.4  
0.2  
0.4  
1
500  
10  
100  
25  
0.1  
1
10  
Collector Current, IC (mA)  
Collector Current, IC(mA)  
Emitter Transition and Output  
Capacitance vs Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
500  
100  
20  
VCB=40V  
f=1MHz  
10  
16  
12  
Cte  
1
Cob  
8
4
0.1  
25  
50  
75  
100 125 150  
0.1  
1
10  
100  
Ambient Temperature, TA(℃)  
Reverse Bias Voltage(V)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R206-035,B  
www.unisonic.com.tw  
MMBT4401  
NPN SILICON TRANSISTOR  
ꢀ
TYPICAL CHARACTERISTICS(Cont.)  
Switching Times  
vs Collector Current  
Turn On and Turn Off Times  
vs Collector Current  
400  
400  
IC  
IC  
IB1=IB2=  
10  
IB1=IB2=  
10  
320  
240  
160  
320  
240  
160  
VCC=25V  
VCC=25V  
tS  
tR  
80  
tF  
80  
toff  
tD  
ton  
0
0
10  
100  
Collector Current, IC (mA)  
1000  
10  
100  
1000  
Collector Current, IC (mA)  
Power Dissipation vs  
Ambient Temperature  
Common Emitter Characteristics  
1
8
VCE =10V  
TA=25℃  
0.75  
6
f=1kHz  
hoe  
0.5  
4
2
hre  
SOT-23  
0.25  
hfe  
hie  
20  
0
75 100 125 150  
50  
Temperature (℃)  
0
25  
30 40 50 60  
0
10  
Collector Curren,t IC (mA)  
Common Emitter Characteristics  
VCE =10V  
Common Emitter Characteristics  
1.3  
2.4  
2
TA=25℃  
IC=10mA  
1.25  
1.2  
hfe  
IC=10mA  
f=1kHz  
hre  
hie  
hfe  
f=1kHz  
hie  
1.15  
1.1  
1.6  
1.05  
1.2  
0.8  
hoe  
1
0.95  
hre  
0.9  
0.85  
0.8  
0.4  
0
hoe  
0.75  
40  
0
60  
80 100  
5
10 15 20 25 30 35  
0
20  
Collector Voltage, VCE (V)  
Ambient Temperature, TA (°C)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R206-035,B  
www.unisonic.com.tw  
MMBT4401  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R206-035,B  
www.unisonic.com.tw  

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