MMBT4403 [UTC]

PNP GENERAL PURPOSE AMPLIFIER; PNP通用放大器
MMBT4403
型号: MMBT4403
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP GENERAL PURPOSE AMPLIFIER
PNP通用放大器

放大器
文件: 总5页 (文件大小:137K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
MMBT4403  
PNP SILICON TRANSISTOR  
PNP GENERAL PURPOSE  
AMPLIFIER  
„
DESCRIPTION  
The UTC MMBT4403 is designed for use as a general purpose  
amplifier and switch requiring collector currents up to 500mA.  
*Pb-free plating product number: MMBT4403L  
„
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
SOT-23  
Normal  
Lead Free Plating  
MMBT4403-AE3-R  
1
2
3
MMBT4403-AE3-R  
E
B
C
Tape Reel  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R206-034,C  
MMBT4403  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
40  
40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5
V
Collector Current-Continuous  
600  
mA  
mW  
mW/  
Total Device Dissipation  
350  
PC  
Derate above 25℃  
2.8  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55 ~ +150  
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty  
cycle operations.  
„
THERMAL CHARACTERISTICS (Ta=25, unless otherwise specified)  
CHARACTERISTIC  
Thermal Resistance, Junction to Ambient  
SYMBOL  
RATINGS  
357  
UNIT  
/W  
θJA  
„
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown  
Voltage (Note)  
BVCEO  
IC=1mA, IB=0  
40  
V
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Base Cut-off Current  
BVCBO  
BVEBO  
ICEX  
Ic=0.1mA, IE=0  
40  
5
V
V
IE=0.1mA, IC=0  
VCE=35V, VEB=0.4V  
VCE=35V, VBE=0.4V  
0.1  
0.1  
µA  
µA  
IBEX  
ON CHARACTERISTICS*  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
VCE=1V,IC=0.1mA  
30  
60  
VCE=1V,IC=1mA  
DC Current Gain  
VCE=1V,IC=10mA  
100  
100  
20  
VCE=2V, IC=150mA (Note)  
VCE=2V, IC=500mA (Note)  
300  
VCE(SAT1) IC=150mA, IB=15mA  
VCE(SAT2 IC=500mA, IB=50mA  
VBE(SAT1) IC=150mA, IB=15mA(Note)  
0.4  
0.75  
0.95  
1.3  
V
V
V
V
Collector-Emitter Saturation  
Voltage  
)
0.75  
200  
Base-Emitter Saturation Voltage  
VBE(SAT2  
)
IC=500mA, IB=50mA  
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
Collector-Base Capacitance  
Emitter-Base Capacitance  
Input Impedance  
fT  
VCE=10V, IC=20mA, f=100MHz  
VCB=10V, IE=0, f=140kHz  
VBE=0.5V, IC=0, f=140kHz  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
VCE=10V, IC=1mA, f=1kHz  
MHz  
pF  
Ccb  
Ceb  
hIE  
8.5  
30  
pF  
1.5  
0.1  
60  
15  
kΩ  
×10-4  
Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
hRE  
hFE  
hOE  
8
500  
100  
1.0  
µmbos  
SWITCHING CHARACTERISTICS  
Delay Time  
tD  
tR  
tS  
tF  
15  
20  
ns  
ns  
ns  
ns  
VCC=30V, IC=150mA IB1=15mA  
Rise Time  
Storage Time  
VCC=30V, IC=150mA  
IB1= IB2=15mA  
225  
30  
Fall Time  
Note Pulse test: Pulse Width300µs, Duty Cycle2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R206-034,C  
www.unisonic.com.tw  
MMBT4403  
PNP SILICON TRANSISTOR  
„
TEST CIRCUIT  
-30V  
200  
Ω
1KΩ  
50Ω  
0
-16V  
220ns  
Figure 1. Saturated Turn-On Switching Timer  
1.5V -6V  
37Ω  
Note: BVEBO=5V  
1k  
1KΩ  
50Ω  
0
-30V  
220ns  
Figure 2. Saturated Turn-Off Switching Timer  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R206-034,C  
www.unisonic.com.tw  
MMBT4403  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Collector-Emitter Saturation Voltage  
vs. Collector Current  
DC Current Gain  
vs. Collector Current  
500  
0.5  
0.4  
VCE =5V  
β=10  
400  
300  
200  
100  
125℃  
25℃  
0.3  
0.2  
25℃  
125℃  
0.1  
0
-40℃  
-40℃  
0
500  
0.1  
0.3  
1
3
10 30 100 300  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
Input and Output  
Capacitance vs. Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
100  
10  
20  
16  
VCB=35V  
12  
8
Cib  
1
Cob  
0.1  
4
0.01  
0
-0.1  
25  
50  
75  
100 125  
-1  
-10  
-50  
Ambient Temperature, TA (℃)  
Reverse Bias Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R206-034,C  
www.unisonic.com.tw  
MMBT4403  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R206-034,C  
www.unisonic.com.tw  

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