MMBT5401G-X-AE3-R [UTC]
HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管
| 型号： | MMBT5401G-X-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT5401
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
*Collector-Emitter Voltage: VCEO=-150V
*High Current Gain
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen-Free
1
2
3
MMBT5401L-x-AE3-R
MMBT5401G-x-AE3-R
E
B
C
Tape Reel
MARKING
2L.
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R206-011.G
MMBT5401
ABSOLUATE MAXIUM RATINGS (TA = 25℃)
PNP SILICON TRANSISTOR
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
-150
V
-5
V
-600
mA
mW
°C
°C
Power Dissipation
PD
350
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
-160
-150
-5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=-100μA, IE=0
BVCEO IC=-1mA, IB=0
BVEBO IE=-10μA, IC=0
ICBO
IEBO
V
V
VCB=-120V, IE=0
VBE=-3V, IC=0
-50
-50
nA
nA
Emitter Cut-off Current
VCE=-5V, IC=-1mA
DC Current Gain(Note)
hFE
V
V
CE=-5V, IC=-10mA
CE=-5V, IC=-50mA
80
160
400
IC=-10mA, IB=-1mA
-0.2
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VBE(SAT)
IC=-50mA, IB=-5mA
-1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
300
6.0
MHz
pF
COB
Noise Figure
NF
8
dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
NISONIC TECHNOLOGIES CO., LTD
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QW-R206-011.G
www.unisonic.com.tw
MMBT5401
■ TYPICAL CHARACTERICS
PNP SILICON TRANSISTOR
Fig.2 DC Current Gain
Fig.1 Collector Output Capacitance
3
20
16
12
10
VCE=-5V
f=1MHz
IE=0
2
10
8
4
0
1
10
0
10
-1
-10
0
1
2
3
0
1
2
-10
-10
-10
-10
-10
-10
-10
Collector Current, Ic (mA)
Collector-Base Voltage, VCB (V)
Fig.4 Saturation Voltage
Fig.3 Base-Emitter on Voltage
1
3
-10
-10
Ic=10*IB
VCE=-5V
VBE
(SAT)
0
2
-10
-10
-1
-10
1
-10
VCE
(SAT)
-2
-10
0
-10
-1
-10
0
1
2
3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-10
-10
Base-Emitter Voltage, VBE (V)
Collector Current, Ic (mA)
Fig.5 Current Gain-Bandwidth
Product
3
10
VCE=-10V
2
10
1
10
0
10
-1
-10
0
1
2
3
-10
-10
-10
-10
Collector Current, Ic (mA)
NISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-011.G
www.unisonic.com.tw
MMBT5401
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
NISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-011.G
www.unisonic.com.tw
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