MMBT5551G-A-AE3-R [UTC]
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3;
| 型号： | MMBT5551G-A-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC MMBT5551 is a high voltage fast-switching NPN
power transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
FEATURES
* High Collector-Emitter Voltage: VCEO=160V
* High current gain
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-23
Lead Free
Halogen-Free
1
2
3
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
E
B
C
Tape Reel
MARKING
G1.
Lead Plating
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R206-010. H
MMBT5551
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector -Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
180
UNIT
V
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
Power Dissipation
160
V
6
V
600
mA
mW
°C
°C
PD
350
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
357
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
104
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=100A, IE=0
IC=1mA, IB=0
MIN
180
160
6
TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
V
IE=10μA, IC=0
ICBO
VCB=120V, IE=0
50
50
nA
nA
Emitter Cut-off Current
IEBO
VBE=4V, IC =0
VCE=5V, IC =1mA
VCE=5V, IC =10mA
VCE=5V, IC =50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC =10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
80
80
80
DC Current Gain(note)
hFE
160
400
0.15
0.2
1
V
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
V
1
V
Current Gain Bandwidth Product
Output Capacitance
fT
100
300
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300s, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
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MMBT5551
■ TYPICAL CHARACTERICS
NPN SILICON TRANSISTOR
Fig.1 Collector Output Capacitance
Fig.2 DC Current Gain
10
3
10
VCE=5V
8
f=1MHz
IE=0
2
10
6
4
2
1
10
0
0
10
0
1
2
-1
10
0
1
2
3
10
10
10
10
10
10
10
Collector-Base Voltage (V)
Collector Current, Ic (mA)
Fig.4 Saturation Voltage
Fig.3 Base-Emitter on Voltage
3
1
10
10
Ic=10*IB
VCE=5V
0
VBE(SAT)
2
10
10
1
-1
10
10
VCE(SAT)
0
-2
10
10
3
-1
10
0
1
2
0
0.2
0.4
0.6
0.8
1.0
10
10
10
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Fig.5 Current Gain-Bandwidth
Product
SAFE OPERATING AREA
3
10
10
VCE=10V
1
2
10
0.1
1
10
0.01
0.001
0
10
10
1000
100
1
0
1
2
3
10
10
10
10
Forward Voltage-VCE(V)
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-010. H
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MMBT5551
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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相关型号：
MMBT5551L-A-AE3-R
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3
UTC
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