MMBT9013G-D-AE3-R [UTC]
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3;
| 型号： | MMBT9013G-D-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT9013
NPN SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
*High total Power Dissipation. (625mW)
*High Collector Current. (500mA)
*Excellent hFE linearity.
*Complementary to UTC MMBT9012
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
2
3
MMBT9013-x-AE3-R MMBT9013L-x-AE3-R MMBT9013G-x-AE3-R SOT-23
E
B
C
Tape Reel
MARKING
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R206-021.C
MMBT9013
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
Collector-Base Voltage
40
20
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
5
V
500
mA
mW
°C
°C
Collector Dissipation
Junction Temperature
Storage Temperature
PC
225
TJ
+150
-55 ~ +150
TSTG
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC=100μA, IE =0
MIN
40
20
5
TYP
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
V
BVCEO
IC=1mA, IB=0
BVEBO
IE =100μA, IC=0
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=500mA, IB=50mA
0.16
0.91
0.67
0.6
1.2
V
V
VBE(ON)
ICBO
VCE =1V, IC=10mA
VCB=25V, IE =0
0.6
0.7
V
Collector Cutoff Current
100
100
300
nA
nA
Emitter Cutoff Current
IEBO
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
hFE1
64
40
120
120
DC Current Gain
hFE2
CLASSIFICATION OF hFE1
RANK
D
E
F
G
H
I
RANGE
64-91
78-112
96-135
112-166
144-202
190-300
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-021.C
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MMBT9013
NPN SILICON TRANSISTOR
TYPICAL CHARACTERICS
Static Characteristic
IB=140μA
Dc Current Gain
VCE=1V
20
18
1000
500
300
IB=120μA
IB=100μA
16
14
100
12
10
8
50
30
IB=80μA
IB=60μA
10
6
IB=40μA
IB=20μA
5
3
4
2
0
1
0
10
20
30
40
50
1
300 1000300010000
3 5 10 3050100
Collector Current, IC (mA)
Collector - Emitter Voltage, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
10000
1000
IC=10IB
IC=10IB
500
300
3000
1000
100
VBE (SAT)
VCE=6V
500
300
50
30
100
10
50
30
5
3
VCE (SAT)
10
1
1
300 1000300010000
1
3
300 1000300010000
3
10 30 100
10 30 100
Collector Current, IC (mA)
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-021.C
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