MMBT9015A [UTC]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;![MMBT9015A](http://pdffile.icpdf.com/pdf2/p00272/img/icpdf/MMBT9015A_1630439_icpdf.jpg)
型号: | MMBT9015A |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN 放大器 光电二极管 晶体管 |
文件: | 总3页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UTC MMBT9015
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9014
2
1
MARKING
3
15
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Ic
RATING
-50
UNIT
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction Temperature
Storage Temperature
-45
-5
-100
225
V
mA
mW
°C
Pc
Tj
TSTG
150
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA, IE=0
MIN TYP MAX UNIT
-50
-45
-5
V
V
V
nA
nA
Ic=-1mA, IB=0
IE=-100µA, Ic=0
VCB=-50V, IE=0
VEB=-5V, IC=0
-50
-100
600
-0.7
Emitter cutoff current
IEBO
DC current gain
hFE
VCE=-5V, Ic=-1mA
Ic=-100mA, IB=-5mA
Ic=-100mA, IB=-5mA
VCE=-5V, Ic=-2mA
VCB=-10V, IE=0, f=1MHz
VCE=-5V, Ic=-10mA
VCE=-5V, Ic=-0.2mA
f=1KHz, Rs=1KΩ
60
200
-0.2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Output Capacitance
Current gain-Bandwidth Porduct
Noise Figure
VCE(sat)
VBE(sat)
VBE(on)
Cob
fT
NF
V
V
V
-0.82 -1.0
-0.6 -0.65 -0.75
4.5
190
0.7
7.0
pF
MHz
dB
100
10
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-023,A
UTC MMBT9015
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-150
100-300
200-600
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-023,A
UTC MMBT9015
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R206-023,A
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