MMBT9015A [UTC]

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;
MMBT9015A
型号: MMBT9015A
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

放大器 光电二极管 晶体管
文件: 总3页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC MMBT9015  
PNP EPITAXIAL SILICON TRANSISTOR  
PRE-AMPLIFIER, LOW LEVEL &  
LOW NOISE  
FEATURES  
*High total power dissipation. (450mW)  
*Excellent hFE linearity.  
*Complementary to UTC MMBT9014  
2
1
MARKING  
3
15  
SOT-23  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
-50  
UNIT  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Collector dissipation  
Junction Temperature  
Storage Temperature  
-45  
-5  
-100  
225  
V
mA  
mW  
°C  
Pc  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA, IE=0  
MIN TYP MAX UNIT  
-50  
-45  
-5  
V
V
V
nA  
nA  
Ic=-1mA, IB=0  
IE=-100µA, Ic=0  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
-50  
-100  
600  
-0.7  
Emitter cutoff current  
IEBO  
DC current gain  
hFE  
VCE=-5V, Ic=-1mA  
Ic=-100mA, IB=-5mA  
Ic=-100mA, IB=-5mA  
VCE=-5V, Ic=-2mA  
VCB=-10V, IE=0, f=1MHz  
VCE=-5V, Ic=-10mA  
VCE=-5V, Ic=-0.2mA  
f=1KHz, Rs=1KΩ  
60  
200  
-0.2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
Output Capacitance  
Current gain-Bandwidth Porduct  
Noise Figure  
VCE(sat)  
VBE(sat)  
VBE(on)  
Cob  
fT  
NF  
V
V
V
-0.82 -1.0  
-0.6 -0.65 -0.75  
4.5  
190  
0.7  
7.0  
pF  
MHz  
dB  
100  
10  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-023,A  
UTC MMBT9015  
PNP EPITAXIAL SILICON TRANSISTOR  
CLASSIFICATION OF hFE  
RANK  
A
B
C
RANGE  
60-150  
100-300  
200-600  
2
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-023,A  
UTC MMBT9015  
PNP EPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-023,A  

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