MMBTH10L-A-AE3-CR [UTC]
RF TRANSISTOR; RF晶体管
| 型号： | MMBTH10L-A-AE3-CR |
| 厂家： | 
Unisonic Technologies |
| 描述： | RF TRANSISTOR |
| 文件： | 总5页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
NPN SILICON TRANSISTOR
RF TRANSISTOR
DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
*Pb-free plating product number: MMBTH10L
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-23
Normal
MMBTH10-x-AE3-C-R
Lead Free Plating
MMBTH10L-x-AE3-C-R
1
2
3
E
B
C
Tape Reel
MARKING
3E
www.unisonic.com.tw
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R206-003,E
MMBTH10
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATINGS
UNIT
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation
Collector current
30
25
3
V
V
225
50
mW
mA
IC
Junction Temperature
Storage Temperature
TJ
150
℃
℃
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
SYMBOL
BVCBO IC=100μA
TEST CONDITIONS
MIN
30
25
3
TYP
MAX
UNIT
V
V
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Collector Cut-off Current
Emitter Cut-off Current
BVEBO IE=10μA
VCE(SAT) IC=4mA, IB=400μA
VBE(ON) VCE=10V, IC=4mA
V
500
950
100
100
mV
mV
nA
nA
ICBO
IEBO
hFE
Cob
fT
VCB=25V
VEB=2V
DC Current Gain
VCE=10V, IC=4mA
VCB=10V, f=1MHZ
VCE=10V, IC=4mA, f=100MHz
60
Output Capacitance
0.7
pF
Current Gain Bandwidth Product
650
MHz
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-100
90-130
120-200
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MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Power Dissipation Vs Ambient
Temperautre
Collector-Cutoff Current Vs
Ambient Temperature
350
300
250
200
150
100
50
10
VCB=30V
1
0
0.1
150
0
25
50
75
100 125
125
25
50
75
100
150
Temperature (℃)
Ambient Temperature, TA (℃)
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MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Output Admittance
Input Admittance
24
6
VCE=10V
Ic=2mA
VCE=10V
Ic=2mA
20
16
5
4
3
2
1
0
gie
bie
boe
goe
12
8
4
0
1000
1000
0
200
500
0
200
500
Frequency, f (MHz)
Frequency, f (MHz)
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MMBTH10
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Reverse Transfer Admittance
Forward Transfer Admittance
60
1.2
1
VCE=10V
Ic=2mA
VCE=10V
Ic=2mA
40
20
gfe
0.8
-bre
0
-20
-40
-60
0.6
0.4
0.2
0
bfe
-gre
200
1000
1000
100
200
500
0
500
Frequency, f (MHz)
Frequency, f (MHz)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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