MMBTH10L-X-AL3-R [UTC]

RF TRANSISTOR; RF晶体管


型号：	MMBTH10L-X-AL3-R
厂家：	Unisonic Technologies
描述：	RF TRANSISTOR RF晶体管晶体晶体管
文件：	总5页 (文件大小：229K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MMBTH10

NPN SILICON TRANSISTOR

RF TRANSISTOR

DESCRIPTION

The UTC MMBTH10 is designed for using as VHF and UHF

oscillators and VHF Mixer in a tuner of a TV receiver.

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

Halogen Free

MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23

MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R SOT-323

MMBTH10-x-AN3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R SOT-523

Tape Reel

MARKING

www.unisonic.com.tw

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QW-R206-003.F

MMBTH10

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

SOT-23

225

200

Power Dissipation

P_C

SOT-323/SOT-523

Collector current

I_C

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage BV_CEOI_C=1mA

SYMBOL

BV_CBOI_C=100µA

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_EBOI_E=10µA

V_CE(SAT)I_C=4mA, I_B=400µA

V_BE(ON)V_CE=10V, I_C=4mA

500

950

100

I_CBO

I_EBO

h_FE

C_ob

f_T

V_CB=25V

V_EB=2V

DC Current Gain

V_CE=10V, I_C=4mA

V_CB=10V, f=1MHZ

V_CE=10V, I_C=4mA, f=100MHz

Output Capacitance

0.7

Current Gain Bandwidth Product

650

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

60-100

90-130

120-200

UNISONIC TECHNOLOGIES CO., LTD

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MMBTH10

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD

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MMBTH10

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

Input Admittance

Output Admittance

120

V_CE=10V

I_C=5mA

V_CE=10V

I_C=5mA

gib

bob

-40

-80

bib

gob

-120

1000

200

500

1000

100

200

500

Frequency, f (MHz)

Forward Transfer Admittance

V_CE=10V

Reverse Transfer Admittan

120

V_CE=10V

I_C=5mA

bfb

I_C=5mA

gfb

-brb

-40

-80

-grb

500

-120

1000

200

500

200

Frequency, f (MHz)

Input Admittance

Frequency, f (MHz)

Output Admittance

VCE=10V

Ic=2mA

VCE=10V

Ic=2mA

gie

bie

boe

goe

1000

200

500

200

500

Frequency, f (MHz)

UNISONIC TECHNOLOGIES CO., LTD

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MMBTH10

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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