MPSA05G-T92-K [UTC]
Small Signal Bipolar Transistor, 0.5A I(C), NPN,;
| 型号： | MPSA05G-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), NPN, 放大器 晶体管 |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA05/55
AMPLIFIER TRANSISTOR
NPN MPSA05
PNP MPSA55
FEATURES
* Collector-Emitter Voltage: VCEO=60V
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
E
E
E
E
2
B
B
B
B
3
C
C
C
C
MPSA05-T92-B
MPSA05-T92-K
MPSA55-T92-B
MPSA55-T92-K
MPSA05L-T92-B
MPSA05L-T92-K
MPSA55L-T92-B
MPSA55L-T92-K
MPSA05G-T92-B
MPSA05G-T92-K
MPSA55G-T92-B
MPSA55G-T92-K
TO-92
TO-92
TO-92
TO-92
Tape Box
Bulk
Tape Box
Bulk
Note: Pin assignment: E: EMITTER, C: COLLECTOR, B: BASE
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Copyright © 2011 Unisonic Technologies Co., LTD
QW-R201-034.Ba
MPSA05/55
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-base voltage
60
Collector-emitter voltage
Emitter-base voltage
60
V
4
500
V
Collector current - Continuous
Total device dissipation, @TA=25℃
Derate above 25℃
mA
mW
mW/℃
mW
mW/℃
℃
625
5
PD
PD
Total device dissipation, @TC=25℃
Derate above 25℃
1500
12
Junction Temperature
TJ
125
Storage Temperature
TSTG
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
200
UNIT
℃/W
Thermal resistance, junction to ambient (Note)
Thermal resistance, junction to case
Rθ
JA
Rθ
JC
83.3
℃/W
Note: RθJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-emitter breakdown voltage
(note 1)
V(BR)CEO IC=1.0mA, IB=0
60
4
V
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
ON CHARACTERISTICS
V(BR)EBO IE=100μA, Ic=0
V
ICES
ICBO
VCE=60V, IB=0
VCB=60V, IE=0
0.1
0.1
μA
μA
IC=10mA, VCE=1V
IC=100mA, VCE=1V
100
100
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter on voltage
VCE(SAT) IC=100mA, IB=10mA
VBE(ON) IC=100mA, VCE=1V
0.25
1.2
V
V
SMALL-SIGNAL CHARACTERISTICS
MPSA05
MPSA55
IC=10mA, VCE=2V, f=100MHz
IC=100mA, VCE=1V, f=100MHz
100
50
MHz
MHz
Current gain bandwidth
product (note 2)
fT
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-034.Ba
www.unisonic.com.tw
MPSA05/55
AMPLIFIER TRANSISTOR
SWITCHING TIME TEST CIRCUIT
TURN-ON TIME
TURN-OFF TIME
VCC
VCC
+VBB
-1.0V
+40V
+40V
5.0µs
100
RB
100
RL
RL
OUTPUT
6.0pF
OUTPUT
6.0pF
+10V
0
VIN
5.0µF
VIN
5.0µF
RB
tr=3.0ns
S
S
100
100
5.0µs
tr=3.0ns
Figure 1. (Note: Total shunt capacitance of test jig and connectors for PNP test circuits, reverse all voltage polarities.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-034.Ba
www.unisonic.com.tw
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