首页 |元器件品牌

MPSA06L-T92-K [UTC]

NPN TRANSISTOR; NPN晶体管
MPSA06L-T92-K
型号： MPSA06L-T92-K
厂家： Unisonic Technologies    Unisonic Technologies
描述：

NPN TRANSISTOR
NPN晶体管

晶体 晶体管
文件： 总4页 (文件大小：245K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
MPSA06  
NPN SILICON TRANSISTOR  
NPN TRANSISTOR  
„
FEATURES  
* Collector-emitter voltage: VCEO=80V  
* Collector dissipation: PD=625mW  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
MPSA06G-T92-B  
MPSA06G-T92-K  
1
E
E
2
B
B
3
C
C
MPSA06L-T92-B  
MPSA06L-T92-K  
TO-92  
TO-92  
Tape Box  
Bulk  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., LTD  
QW-R201-035.C  
MPSA06  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
80  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
4
V
Collector Current - Continuous  
Total device Dissipation, @TA=25°С  
Derate above 25°С  
500  
mA  
625  
5
mW  
mW/°С  
mW  
mW/°С  
°С  
PD  
PD  
Total device Dissipation, @TC=25°С  
Derate above 25°С  
1500  
12  
Junction Temperature  
TJ  
+125  
-55 ~ +150  
Storage Temperature  
TSTG  
°С  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
MIN  
TYP  
MAX  
200  
UNIT  
Junction-to-Ambient  
Junction-to-Case  
°С/W  
θJC  
83.3  
„
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(Note 1)  
BVCEO  
IC=1.0mA, IB=0  
80  
4
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
ON CHARACTERISTICS  
BVEBO  
ICEO  
IE=100μA, Ic=0  
VCE=60V, IB=0  
VCB=80V, IE=0  
V
0.1  
0.1  
μA  
μA  
ICBO  
IC=10mA, VCE=1V  
IC=100mA, VCE=1V  
IC=100mA, IB=10mA  
IC=100mA, VCE=1V  
100  
100  
Dc Current Gain  
hFE  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT)  
VBE(ON)  
0.25  
1.2  
V
V
SMALL-SIGNAL CHARACTERISTICS  
Current Gain Bandwidth Product  
(Note 2)  
fT  
IC=10mA, VCE=2V, f=100MHz  
100  
MHz  
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%  
2. fT is defined as the frequency at which IhfeI extrapolates to unity.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R201-035.C  
MPSA06  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Capacitance  
80  
60  
TJ=25°С  
40  
Cibo  
20  
10  
8.0  
Cobo  
6.0  
4.0  
0.1  
0.5 1.0  
5.0  
10  
50 100  
Reverse Voltage, VR (Volts)  
Active-Region Safe Operating Area  
1.0k  
700  
100µs  
500  
300  
200  
1.0s  
TC=25°С  
TA=25°С  
100  
70  
50  
Current Limit  
Thermal Limit  
Second Breakdown  
Limit  
30  
20  
10  
1.0 2.0  
5.0 10  
50 100  
Collector-Emitter Voltage, VCE (Volts)  
“On” Voltages  
1.0  
TJ=25°С  
VBE(SAT) @ IC/IB=10  
0.8  
0.6  
VBE(ON) @ VCE=1.0V  
0.4  
0.2  
0
VCE(ON) @ IC/IB=10  
0.5 1.0  
10  
5.0  
50 100  
500  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R201-035.C  
www.unisonic.com.tw  
MPSA06  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
Collector Saturation Region  
TJ=25°С  
Base-Emitter Temperature Coefficient  
1.0  
0.8  
0.6  
-0.8  
-1.2  
-1.6  
IC=250mA  
IC=100mA  
IC=50mA  
IC=500mA  
RθVB for VBE  
0.4  
0.2  
0
-2.0  
-2.4  
-2.8  
IC=10mA  
0.5 1.0  
10  
0.5 1.0  
10  
5.0  
50 100  
500  
5.0  
50 100  
500  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R201-035.C  
www.unisonic.com.tw  

相关型号：

MPSA06M1TA

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
DIODES

MPSA06Q

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
DIODES

MPSA06RA

 NPN Bipolar Small Signal Transistor, 2000-REEL
ONSEMI

MPSA06RL

 Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA

MPSA06RL1

 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MOTOROLA

MPSA06RL1G

 Amplifier Transistors
ONSEMI

MPSA06RLG

 Amplifier Transistors
ONSEMI

MPSA06RLRA

 Amplifier Transistors
ONSEMI

MPSA06RLRAG

 Amplifier Transistors
ONSEMI

MPSA06RLRE

 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
ONSEMI

MPSA06RLRM

 Amplifier Transistors
ONSEMI

MPSA06RLRM

 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MOTOROLA
©2020 ICPDF网 联系我们和版权申明