MPSA194G-T9N-K [UTC]
Small Signal Bipolar Transistor;
| 型号： | MPSA194G-T9N-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor 开关 晶体管 |
| 文件： | 总4页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA194
PNP SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR
1
DESCRIPTION
TO-92
The UTC MPSA194 is designed for high voltage low power
switching applications especially for use in telephone and
telecommunication circuits.
FEATURES
* Collector-Emitter Voltage: VCEO=400V
* Power Dissipation: 1.0W
1
TO-92NL
APPLICATIONS
* Telephone Circuit
* Telecommunication Circuit
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
E
E
E
E
2
B
B
C
C
3
C
C
B
B
MPSA194L-T92-B
MPSA194L-T92-K
MPSA194L-T9N-B
MPSA194L-T9N-K
MPSA194G-T92-B
MPSA194G-T92-K
MPSA194G-T9N-B
MPSA194G-T9N-K
TO-92
TO-92
Tape Box
Bulk
TO-92NL
TO-92NL
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
MARKING
UTC
L: Lead Free
G: Halogen Free
MPSA194
TO-92
Data Code
1
UTC
L: Lead Free
G: Halogen Free
MPSA194
TO-92NL
Data Code
www.unisonic.com.tw
1 of 4
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R201-026.D
MPSA194
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-400
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
-400
V
-6
V
-800
mA
W
Collector Dissipation (TA=25C)
Junction Temperature
Storage Temperature
PC
1.0
TJ
150
C
C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collect Cut-off Current
BVCBO IC =-100µA, IE =0A
BVCEO IC =-1mA, IB =0A
-400
-400
V
V
ICBO
ICEO
IEBO
VCB =-400 V, IE =0A
VCB =-200 V, VBE =0V
VEB = -6 V, IC =0A
-10
-1
µA
µA
µA
Collect Cut-off Current
Emitter Cut-off Current
-0.2
VCE =-10 V ,IC =-1mA
VCE =-10 V ,IC =-20mA
VCE =-10 V ,IC =-80mA
50
50
40
DC Current Gain
hFE
800
Base-Emitter Saturation Voltage
VBE(SAT) IC =-20mA, IB =- 2mA
-0.9
-0.2
-1.2
30
V
V
IC =-20mA, IB =- 4mA
VCE(SAT)
Collector-Emitter Saturation Voltage
IC =-80mA, IB =- 2mA
V
Output Capacitance
COB
fT
VCB =-20 V, IE =0A, f =1MHz
VCE =-20V, IE =-10A, f =1MHz
pF
MHZ
Current Gain Bandwidth Product
10
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-026.D
www.unisonic.com.tw
MPSA194
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGES O., LTD
3 of 4
QW-R201-026.D
www.unisonic.com.tw
MPSA194
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-026.D
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明