MPSA43G-AB3-R [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管型号: | MPSA43G-AB3-R |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE TRANSISTOR |
文件: | 总3页 (文件大小:132K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA42/43
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSA42/43 are high voltage transistors, designed for
telephone switch and high voltage switch.
FEATURES
*Collector-Emitter voltage:
V
V
CEO=300V(UTC MPSA42)
CEO=200V(UTC MPSA43)
*High current gain
*Complement to UTC MPSA92/93
*Pb-free plating product number: MPSA42L
MPSA43L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
MPSA42G-AB3-R
MPSA42G-T92-B
MPSA42G-T92-K
MPSA43G-AB3-R
MPSA43G-T92-B
MPSA43G-T92-K
1
B
E
E
B
E
E
2
C
B
B
C
B
B
3
E
C
C
E
C
C
MPSA42-AB3-R
MPSA42-T92-B
MPSA42-T92-K
MPSA43-AB3-R
MPSA43-T92-B
MPSA43-T92-K
MPSA42L-AB3-R
MPSA42L-T92-B
MPSA42L-T92-K
MPSA43L-AB3-R
MPSA43L-T92-B
MPSA43L-T92-K
SOT-89
TO-92
TO-92
SOT-89
TO-92
TO-92
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R208-034.C
MPSA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
300
UNIT
V
Collector-Base Voltage
MPSA42
MPSA43
MPSA42
MPSA43
200
V
Collector-Emitter Voltage
300
V
VCEO
200
V
Emitter-Base Voltage
Collector Current
VEBO
Ic
6
V
500
mA
mW
mW
°C
°C
SOT-89
TO-92
500
Collector Dissipation (Ta=25℃)
Pc
625
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
300
200
300
200
6
TYP MAX UNIT
Collector-Base Breakdown
Voltage
MPSA42
MPSA43
MPSA42
MPSA43
V
V
V
V
V
BVCBO Ic=100μA, IE=0
Collector-Emitter Breakdown
Voltage
BVCEO Ic=1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=100μA, Ic=0
MPSA42
MPSA43
MPSA42
VCB=200V, IE=0
100
100
100
100
nA
nA
nA
nA
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
VCB=160V, IE=0
VEB=6V, Ic=0
IEBO
MPSA43
VEB=4V, Ic=0
VCE=10V, Ic=1mA
80
80
80
DC Current Gain
hFE
VCE=10V, Ic=10mA
CE=10V, Ic=30mA
300
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) Ic=20mA, IB=2mA
VBE(SAT) Ic=20mA, IB=2mA
0.2
V
V
0.90
V
CE=20V, Ic=10mA,
f=100MHz
CB=20V, IE=0
f=1MHz
Current Gain Bandwidth Product
fT
50
MHz
MPSA42
MPSA43
V
3
4
pF
pF
Collector Base Capacitance
Ccb
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-034.C
www.unisonic.com.tw
MPSA42/43
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Fig.1 DC Current Gain
Fig.2 Saturation Voltage
3
1
10
10
Ic=10*IB
VCE=10V
VBE(SAT)
2
0
10
10
-1
10
1
10
VCE(SAT)
0
-2
10
10
0
1
2
-1
0
1
2
3
10
10
10
10
10
10
10
10
Collector Current, Ic(mA)
Collector Current, Ic(mA)
Fig.4 Current Gain
Bandwidth Product
Fig.3 Capacitance
2
3
10
10
VCE=20V
IE=0
f=1MHz
1
2
10
10
1
10
-1
0
1
2
0
1
2
10
10
10
10
10
10
10
Collector-Base Voltage(V)
Collector Current, Ic(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R208-034.C
www.unisonic.com.tw
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