MPSA44BL [UTC]
Transistor;
| 型号： | MPSA44BL |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor 晶体 晶体管 高压 |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=400V(MPSA44)
VCEO=350V(MPSA45)
1
*Collector current up to 300mA
*Complement to MPSA94/93
*Collector Dissipation:
Pc(max)=625mW
APPLICATION
*Telephone switching
*High voltage switch
SOT-89
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
Collector-base voltage
SYMBOL
RATING
UNIT
V
MPSA44
VCBO
500
400
MPSA45
Collector-emitter voltage
MPSA44
V
VCEO
400
350
6
625
1.5
300
150
MPSA45
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector dissipation(Tc=25°C)
Collector current
Junction Temperature
Storage Temperature
VEBO
Pc
Pc
Ic
Tj
V
mW
W
mA
°C
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
MPSA44
SYMBOL
BVCBO
TEST CONDITIONS
MIN TYP MAX UNIT
Ic=100µA,IB=0
500
400
V
MPSA45
Collector-emitter breakdown voltage
BVCEO
Ic=1mA,IB=0
MPSA44
400
350
6
V
MPSA45
Emitter-base breakdown voltage
Collector cut-off current
MPSA44
BVEBO
ICBO
IE=100µA,Ic=0
V
µA
VCB=400V,IE=0
VCB=320V,IE=0
0.1
0.1
MPSA45
Collector cut-off current
ICES
µA
MPSA44
VCE=400V,IB=0
VCE=320V,IB=0
0.5
0.5
MPSA45
1
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R208-006,A
UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR
PARAMETER
Emitter cut-off current
DC current gain(note)
SYMBOL
IEBO
TEST CONDITIONS
VEB=4V,Ic=0
MIN TYP MAX UNIT
0.1
µA
hFE
VCE=10V,Ic=1mA
VCE=10V,Ic=10mA
VCE=10V,Ic=50mA
VCE=10V,Ic=100mA
Ic=1mA,IB=0.1mA
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
Ic=10mA,IB=1mA
VCE=20V,Ic=10mA,
f=100MHz
40
50
45
40
240
Collector-emitter saturation voltage
VCE(sat)
0.4
0.5
V
0.75
0.75
Base-emitter saturation voltage
Current gain bandwidth product
VBE(sat)
fT
V
MHz
50
Output capacitance
Cob
VCB=20V,IE=0
7
pF
f=1MHz
Note:Pulse test:PW<300µs,Duty Cycle<2%
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
Fig.2 Turn-on switching times
Fig.3 Turn-off switching times
1
2
10
10
140
120
100
80
VCE=150V
Ic/IB=10
VCE=150V
Ic/IB=10
Ta=25°C
Ta=25°C
1
VCE=10V
VBE(OFF)=4V
10
Ts
0
60
10
40
20
0
0
10
Tf
Tf
-20
-40
Td
-1
10
10
-1
10
0
1
2
3
4
0
1
2
10
0
1
2
10
10
10
10
10
10
10
10
10
Ic,Collector current(mA)
Ic,Collector current(mA)
Ic,Collector current(mA)
Fig.4 Capacitance
Fig.5 ON Voltage
Fig.6 Collector saturation region
3
1.0
0.8
0.5
0.4
10
Ta=25°
C
Ic=1mA
VBE(sat),Ic/IB=10
Ic=10mA
2
Cib
10
Ic=50mA
0.6
0.3
0.2
VBE(ON),VCE=10V
0.4
0.2
0
1
10
Cob
VCE(sat),Ic/IB=10
0.1
Ta=25°
C
0
0
10
-1
0
1
2
3
-1
10
0
1
2
3
1
2
3
4
5
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Collector voltage(V)
Ic,Collector current(mA)
Ib, base current(µA)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R208-006,A
UTCMPSA44/45 NPN EPITAXIAL SILICON TRANSISTOR
Fig.7 High Frequency
Fig.8 Safe operating area
current gain
2
4
10
10
Valid Duty
VCE=10V
f=10MHz
Ta=25°C
Cycle<10%
1ms
1s
3
10
1
0.1ms
10
2
10
0
10
1
10
MPSA44
-1
10
0
10
-1
10
0
1
2
3
0
1
2
3
4
10
10
10
10
10
10
10
10
10
Ic,Collector current(mA)
Collector voltage(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R208-006,A
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