MPSA44HG-AB3-R [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | MPSA44HG-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总4页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MPSA44H
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
* Collector-Emitter Voltage:* VCEO=400V
* Collector Current up to 300mA
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
B
E
E
E
2
C
B
B
B
3
E
C
C
C
MPSA44HL-AB3-R
MPSA44HL-T92-B
MPSA44HL-T92-K
MPSA44HL-T92-R
MPSA44HG-AB3-R
MPSA44HG-T92-B
MPSA44HG-T92-K
MPSA44HG-T92-R
SOT-89
TO-92
TO-92
TO-92
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., LTD
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MPSA44H
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
800
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
V
6
V
300
mA
SOT-89
TO-92
500
Collector Dissipation
PC
mW
625
Junction Temperature
Operating Temperature
Storage Temperature
TJ
125
°C
°C
°C
TOPR
TSTG
-20 ~ +85
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
MIN TYP MAX UNIT
800
400
6
V
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IE=100μA, IC=0
VCB=400V, IE=0
VCE=400V, IB=0
VEB=4V, IC=0
V
0.1
0.5
0.1
μA
μA
μA
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ICEO
IEBO
ON CHARACTERISTICS
V
CE=10V, IC=1mA
40
82
45
40
240
240
240
240
0.4
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
DC Current Gain (Note)
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
0.5
V
V
0.75
0.75
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=20V,IC=10mA, f=100MHz
VCB=20V, IE=0 f=1MHz
50
MHz
pF
COB
7
Note: Pulse test: PW<300μs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-083.C
www.unisonic.com.tw
MPSA44H
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
ON Voltage
Collector SaturationRegion
1.0
0.8
0.5
0.4
TA=25℃
IC=1mA
VBE(SAT), IC/IB=10
IC=10mA
IC=50mA
0.6
0.3
0.2
VBE(ON), VCE=10V
VCE(SAT), IC/IB=10
0.4
0.2
0
0.1
0
TA=25℃
102
100
101
102
103
104
10-1
103
101
105
Base Current, IB (µA)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-083.C
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MPSA44H
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
High Frequency Current Gain
Safe Operating Area
Valid Duty
102
101
100
10-1
VCE=10V
f=10MHz
TA=25 C
Cycle<10%
1ms
103
1s
0.1ms
102
101
100
101
102
103
100
104
100
101
102
10-1
103
Collector Current, IC (mA)
Collector Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-083.C
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