N5027-N-TA3-C-T [UTC]
HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR; 高电压和高可靠性NPN晶体管
| 型号： | N5027-N-TA3-C-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
N5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY NPN
TRANSISTOR
1
TO-220
ꢀ FEATURES
* High Voltage (VCEO = 800V)
* High Speed Switching
* Wide SOA
1
TO-220F
*Pb-free plating product number: N5027L
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
N5027L-x-TA3-F-T
N5027L-x-TF3-F-T
1
B
B
2
C
C
3
E
E
N5027-x-TA3-F-T
N5027-x-TF3-F-T
TO-220
Tube
Tube
TO-220F
N5027L-x-TA3-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(1) T: Tube
(2) refer to Pin Assignment
(3) TA3: TO-220, TF3: TO-220F
(4) x: refer to Classificationof hFE1
(5) L: Lead Free Plating, Blank: Pb/Sn
(5)Lead Plating
www.unisonic.com.tw
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R203-032,A
N5027
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
850
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Collector Current (Pulse)
Base Current
800
V
7
V
3
10
A
ICP
A
IB
1.5
A
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
PC
50
W
℃
℃
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
850
800
7
TYP
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
BVCBO IC=1mA, IE=0
BVCEO IC=5mA, IB=0
BVEBO IE=1mA, IC=0
V
V
V
IC=1.5A, IB1= -IB2=0.3A
Collector-Emitter sustaining Voltage
VCEX(SUS)
800
V
L=2mH, Clamped
VCB=800V, IE=0
VEB=5V, IC=0
μA
μA
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
10
10
40
hFE 1
hFE 2
VCE=5V, IC=0.2A
VCE=5V, IC=1A
10
6
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE (SAT) IC=1A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
1.1
1.5
V
V
Cob
fT
VCB=10V, f=1MHz, IE=0
60
15
pF
Current Gain Bandwidth Product
Turn ON Time
VCE=10V, IC=0.2A
MHz
μs
μs
μs
tON
tSTG
tF
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
0.5
3
Storage Time
Fall Time
0.3
ꢀ
CLASSIFICATION of hFE1
RANK
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-032,A
N5027
NPN SILICON TRANSISTOR
■ TYPICAL CHARACTERISTICS
Static Characteristic
Collector Current vs. Collector-Emitter Voltage
DC Current Gain vs. Collector Current
VCE=5V
4.0
1000
100
10
3.6
3.2
2.8
2.4
IB=150 mA
2.0
IB=100 mA
1.6
1.2
IB=50mA
0.8
IB=10mA
0.4
0.1
1
1
0.01
0.0
10
0
1
2
3
4
5
6
7
8
9
10
Collector Current, IC (A)
Collector-Emitter Voltage, VCE (V)
Saturation Voltage vs. Collector Current
Collector Current vs. Base-Emitter Voltage
VCE=5V
4.0
10
1
Ic=5IB
3.5
3.0
2.5
2.0
1.5
1.0
0.1
0.5
0.0
0.1
1
0.01
0.01
1.2
10
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current, IC (A)
Base-Emitter Voltage, VBE (V)
Switching Time
Safe Operating Area
Time vs. Collector-Emitter Voltage
Collector Current vs. Collector-Emitter Voltage
10
100
10
Vcc=400V
5.IB1= - 2.5.IB2=Ic
IcMAX.(Pulse)
IcMAX.(Continuous )
1
0
1
m
s
0
0
μ
1
m
s
1
s
1
0.1
DC
0.1
0.01
1E-s
0.01
1
10
0.1
1
10
100
1000
10000
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-032,A
N5027
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Reverse Operating Area
Power Derating
Collector Current vs. Collector-Emitter Voltage
Power Dissipation vs. Case Temperature
80
100
10
IB2=-0.3A
70
60
50
1
40
30
20
0.1
10
0
100
0.01
1000
10000
150 175
10
0
25
50
75
100 125
(℃)
Collector-Emitter Voltage, VCE (V)
Case Temperature, T
C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-032,A
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