P1856-AA3-R [UTC]
HIGH CURRENT TRANSISTOR; 高电流晶体管
| 型号： | P1856-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT TRANSISTOR |
| 文件： | 总3页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UP1856
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
ꢀ
FEATURES
* High current switching
* Low VCE(SAT)
* High hFE
1
SOT-223
*Pb-free plating product number: UP1856L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
SOT-223
Packing
Normal
Lead Free Plating
UP1856L-AA3-R
1
2
3
UP1856-AA3-R
B
C
E
Tape Reel
UP1856L-AA3-R
(1)Packing Type
(1) R: Tape Reel
(2) AA3: SOT-223
(2)Package Type
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 3
QW-R207-014,B
UP1856
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC(PEAK)
IC
RATINGS
UNIT
V
Collector-Base Voltage
-220
Collector-Emitter Voltage
Emitter-Base Voltage
-200
V
-6
V
Peak Pulse Current
-5
A
Continuous Collector Current
Power Dissipation at Ta=25°C
Junction Temperature
Storage Temperature
-2
1
A
PD
W
℃
℃
TJ
+150
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
TEST CONDITIONS
IC= -10mA, IB=0 (Note)
IC= -0.1mA, IE=0
MIN
TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
-200 -240
-220 -300
V
V
BVCBO
BVEBO
IE= -0.1mA, IC=0
-6
-8
V
IC= -100mA, IB= -10mA
IC= -1A, IB= -100mA
IC= -2A, IB=-400mA
IC=-2A, IB=-400mA
IC=-2A, VCE=-5V (Note)
VCB=-200V, IE=0
-30
-50
mV
mV
mV
Collector-Emitter Saturation Voltage(Note)
VCE(SAT)
-120 -165
-168 -275
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Collector Cut-Off Current
VBE(SAT)
VBE(ON)
ICBO
-970 -1110 mV
-810 -950
mV
nA
nA
-50
-10
Emitter Cut-Off Current
IEBO
VEB=-6V, IC=0
hFE1
IC=-10mA, VCE=-5V
IC=-1A, VCE=-5V
100
100
50
200
200
150
10
300
hFE2
DC Current Gain (Note)
hFE3
IC=-2A, VCE=-5V
hFE4
IC=-5A, VCE=-5V
IC=-100mA, VCE=-10V
f=50MHz
Transition Frequency
fT
110
MHz
Output Capacitance
Turn-on Time
Cob
tON
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
32
67
pF
ns
ns
Turn-off Time
tOFF
1140
Note: Pulsed test: duty cycle ≤ 2%, tP =300µsec.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R207-014,B
www.unisonic.com.tw
UP1856
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Base-Emitter Saturation vs.
Collector Current
Collector-Emitter Saturation Voltagevs.
Collector Current
IC/IB=10
IC/IB=10
1.6
1.2
0.8
0.4
0
1.6
1.2
-55℃
+25℃
+100℃
-55℃
+25℃
+150℃
0.8
0.4
0
0.001 0.01
0.1
1
10 20
0.00
1
0.01
0.1
1
10 20
Collector Current, IC (A)
Collector Current, IC (A)
DC Current Gain vs. Collector Current
Base-Emitter Turn-on Voltagevs Collector
Current
VCE=1V
-55℃
+25℃
+100℃
+100℃
1.6
300
+25℃
1.2
0.8
0.4
-55℃
200
100
VCE=1V
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
Collector Current, IC (A)
Collector Curren,t IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R207-014,B
www.unisonic.com.tw
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