PN2907A_10 [UTC]

PNP GENERAL PURPOSE AMPLIFIER; PNP通用放大器
PN2907A_10
型号: PN2907A_10
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP GENERAL PURPOSE AMPLIFIER
PNP通用放大器

放大器
文件: 总6页 (文件大小:314K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
PN2907A  
PNP SILICON TRANSISTOR  
PNP GENERAL PURPOSE  
AMPLIFIER  
„
DESCRIPTION  
This UTC PN2907A is designed for use as a general purpose  
amplifier and switch requiring collector currents to 500 mA.  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
PN2907AL-AB3-R  
PN2907AL-T92-B  
PN2907AL-T92-K  
Halogen Free  
1
B
E
E
2
C
B
B
3
E
C
C
PN2907A-AB3-R  
PN2907A-T92-B  
PN2907A-T92-K  
PN2907AG-AB3-R  
PN2907AG-T92-B  
PN2907AG-T92-K  
SOT-89  
TO-92  
TO-92  
Tape Reel  
Tape Box  
Bulk  
www.unisonic.com.tw  
Copyright © 2010 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R201-041.D  
PN2907A  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIUM RATINGS  
„
(Ta=25°C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
RATINGS  
-60  
UNIT  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
-60  
V
-5  
V
Collector Current-Continuous  
-800  
mA  
mW  
mW  
°C  
SOT-89  
TO-92  
350  
Power Dissipation  
PD  
625  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
TSTG  
°C  
Note: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty  
cycle operations.  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
THERMAL DATA  
PARAMETER  
Thermal resistance, junction to Ambient  
SYMBOL  
RATINGS  
104  
UNIT  
/W  
/W  
SOT-89  
TO-92  
θJA  
200  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Base Cutoff Current  
BVCEO IC=-10mA, IB=0  
BVCBO IC=-10μA, IE=0  
BVEBO IE=-10μA , IC=0  
-60  
-60  
-5  
V
V
V
IB  
VCB=-30V, VEB=-0.5V  
VCE=-30V, VBE=-0.5V  
-50  
-50  
nA  
nA  
μA  
μA  
Collector Cutoff Current  
ICEX  
V
CB=-50V, IE=0  
-0.02  
-20  
Collector Cutoff Current  
ICBO  
VCB=-50V, IE=0, Ta=150°C  
ON CHARACTERISTICS  
Ic=-0.1mA, VCE=-10V  
75  
100  
100  
100  
50  
Ic=-1.0 mA, VCE=-10V  
DC Current Gain  
hFE  
Ic=-10 mA, VCE=-10V  
Ic=-150 mA, VCE=-10V (Note)  
Ic=-500 mA, VCE=-10V (Note)  
Ic=-150mA, IB=-15mA  
300  
Collector-Emitter Saturation Voltage  
(Note)  
-0.4  
-1.6  
-1.3  
-2.6  
V
V
V
V
VCE(SAT)  
VBE(SAT)  
Ic=-500mA, IB=-50mA  
Ic=-150mA, IB=-15mA (Note)  
Ic=-500mA, IB=-50mA  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Current Gain – Bandwidth Product  
Output Capacitance  
Input Capacitance  
SWITCHING CHARACTERISTICS  
Turn-on Time  
fT  
Ic=-50mA, VCE=-20V, f=100MHz 200  
VCB=-10V, IE=0, f=100kHz  
MHz  
pF  
Cob  
Cib  
8
VEB=-2V, IC=0, f=100kHz  
30  
pF  
tON  
tDLY  
tR  
45  
10  
ns  
ns  
ns  
ns  
ns  
ns  
Vcc=-30V, Ic=-150mA  
IB1=-15mA  
Delay Time  
Rise Time  
40  
Turn-off Time  
tOFF  
tS  
100  
80  
Vcc=-6V, Ic=-150mA  
IB1=IB2=-15mA  
Storage Time  
Fall Time  
tF  
30  
Note: Pulse Test: Pulse Width 300ms, Duty Cycle2.0%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
www.unisonic.com.tw  
QW-R201-041.D  
PN2907A  
PNP SILICON TRANSISTOR  
„
TEST CIRCUITS  
-30V  
200Ω  
1.0kΩ  
0
-16V  
50Ω  
200ns  
Fig. 1 Saturated Turn-On Switching Time Test Circuit  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
www.unisonic.com.tw  
QW-R201-041.D  
PN2907A  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UNIONIC TECHNOLOGIECO., LTD  
4 of 6  
www.unisonic.com.tw  
QW-R201-041.D  
PN2907A  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
Rise Time vs Collector and Turn On Base  
Currents  
-50  
tR =-15V  
-20  
-10  
-5  
30ns  
60ns  
-2  
-1  
-10  
-100  
-500  
Collector Current, IC (mA)  
„
TYPICAL CHARACTERISTICS FOR COMMON EMITTER (f=1kHz)  
Common Emitter Characteristics  
hoe  
Common Emitter Characteristics  
1.3  
1.2  
1.1  
1
5
hre  
hie  
hfe  
hoe  
hre and hoe  
hre  
hfe  
2
1
hie  
0.5  
hie  
0.9  
0.8  
IC= -10mA  
Ta=25℃  
0.2  
0.1  
VCE= -10V  
Ta=25℃  
hfe  
-4  
-16  
Collector Voltage, VCE (V)  
-20  
-8  
-12  
-1  
-2  
-5  
-10  
-20  
-50  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
www.unisonic.com.tw  
QW-R201-041.D  
PN2907A  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS FOR COMMON EMITTER(Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
www.unisonic.com.tw  
QW-R201-041.D  

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