PZT5401L-AA3-R-B [UTC]
暂无描述;
| 型号： | PZT5401L-AA3-R-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | 暂无描述 晶体 开关 晶体管 功率双极晶体管 光电二极管 高压 |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD.
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
ꢀ
FEATURES
*High Collector-Emitter Voltage:
VCEO=-150V
*High current gain
APPLICATIONS
*Telephone Switching Circuit
*Amplifier
1
SOT-223
*Pb-free plating product number:PZT5401L
ꢀ PIN CONFIGURATION
PIN NO.
PIN NAME
Base
1
2
3
Collector
Emitter
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tape & Reel
Normal
Lead Free Plating
PZT5401-AA3-R PZT5401L-AA3-R SOT-223
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., LTD.
1 of 4
QW-R207-013,A
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
-150
V
-5
V
-600
mA
W
Power Dissipation
PD
2
℃
Operating Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
℃
TSTG
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VBE=-3V, Ic=0
MIN
-160
-150
-6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
ICBO
-50
-50
nA
nA
Emitter Cut-off Current
IEBO
V
CE=-5V, Ic=-1mA
80
80
80
DC Current Gain(note)
hFE
VCE=-5V, Ic=-10mA
VCE=-5V, Ic=-50mA
400
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.2
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-10V, Ic=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
400
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R207-013,A
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS
Fig.1 Collector output Capacitance
Fig.2 DC current Gain
10
3
10
VCE=-5V
8
6
f=1MHz
IE=0
2
10
4
2
1
10
0
0
10
0
1
2
-1
-10
0
1
2
3
-10
-10
-10
-10
-10
-10
-10
Collector-Base voltage (V)
Ic,Collector current (mA)
Fig.4 Saturation voltage
Fig.3 Base-Emitter on Voltage
3
1
-10
-10
Ic=10*IB
VCE=-5V
0
VBE(sat)
2
1
-10
-10
-10
-1
-10
VCE(sat)
0
-2
-10
-10
3
-1
-10
0
1
2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-10
-10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
3
10
10
VCE=-10V
2
1
10
0
10
0
1
2
3
-10
-10
-10
-10
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R207-013,A
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R207-013,A
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