PZTA42L-AA3-R [UTC]
HIGH VOLTAGE TRANSISTOR; 高压晶体管
| 型号： | PZTA42L-AA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR |
| 文件： | 总3页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
PZTA42/43
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA42/43 are high voltage transistors, designed for
telephone switch and high voltage switch.
FEATURES
* Collector-emitter voltage: VCEO=300V (UTC PZTA42)
CEO=200V (UTC PZTA43)
* High current gain
1
V
SOT-223
* Complement to UTC PZTA92/93
* Collector power dissipation: PC(MAX)=1W
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
PZTA42L-AA3-R
PZTA43L-AA3-R
PZTA42G-AA3-R
PZTA43G-AA3-R
SOT-223
SOT-223
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R207-005.E
PZTA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
V
PZTA42
PZTA43
PZTA42
PZTA43
300
200
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
V
300
V
VCEO
200
V
Emitter-Base Voltage
Collector Current
VEBO
IC
6
V
500
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
1
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
300
200
300
200
6
TYP
MAX UNIT
PZTA42
PZTA43
PZTA42
PZTA43
V
V
V
V
V
Collector-Base Breakdown Voltage
BVCBO IC =100μA, IE=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCEO IC =1mA, IB=0
BVEBO IE=100μA, IC =0
VCB=200V, IE=0
ICBO
PZTA42
PZTA43
PZTA42
PZTA43
100
100
100
100
nA
nA
nA
nA
VCB=160V, IE=0
VBE=6V, IC =0
IEBO
Emitter Cut-Off Current
DC Current Gain
VBE=4V, IC =0
V
CE=10V, IC =1mA
80
80
80
hFE
VCE=10V, IC =10mA
VCE=10V, IC 30mA
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCE(SAT) IC =20mA, IB=2mA
VBE(SAT) IC =20mA, IB=2mA
0.2
V
V
0.90
fT
VCE=20V, IC =10mA, f=100MHz
50
MHz
pF
PZTA42
VCB=20V, IE=0, f=1MHz
PZTA43
3
4
Collector Base Capacitance
CCB
pF
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R207-005.E
www.unisonic.com.tw
PZTA42/43
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R207-005.E
www.unisonic.com.tw
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