PZTA45-AA3-R [UTC]

Transistor;
PZTA45-AA3-R
型号: PZTA45-AA3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
PZTA44/45  
NPN SILICON TRANSISTOR  
NPN HIGH VOLTAGE  
TRANSISTOR  
FEATURES  
* Collector-emitter voltage:  
VCEO=400V(PZTA44)  
1
VCEO=350V(PZTA45)  
* Collector current up to 300mA  
* Complement to PZTA94/93  
SOT-223  
APPLICATION  
* Telephone switching  
* High voltage switch  
*Pb-free plating product number:  
PZTA44L/PZTA45L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
PZTA44L-AA3-R  
PZTA44L-AA3-T  
PZTA45L-AA3-R  
PZTA45L-AA3-T  
1
B
B
B
B
2
C
C
C
C
3
E
E
E
E
PZTA44-AA3-R  
PZTA44-AA3-T  
PZTA45-AA3-R  
PZTA45-AA3-T  
SOT-223  
SOT-223  
SOT-223  
SOT-223  
Tape Reel  
Tube  
Tape Reel  
Tube  
PZTA44L-AA3-R  
(1)Packing Type  
(2)Package Type  
(1) R: Tape Reel, T: Tube  
(2) AA3: SOT-223  
(3)Lead Plating  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2007 Unisonic Technologies Co., Ltd  
1of 4  
QW-R207-003,B  
PZTA44/45  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS  
(Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
500  
UNIT  
V
PZTA44  
PZTA45  
PZTA44  
PZTA45  
Collector-Base Voltage  
400  
V
400  
V
Collector-Emitter Voltage  
VCEO  
350  
V
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
6
V
300  
mA  
W
°C  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
PC  
1.2  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS  
(TJ =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
500  
400  
400  
350  
6
TYP  
MAX  
UNIT  
V
PZTA44  
PZTA45  
PZTA44  
PZTA45  
Collector-Base Breakdown  
Voltage  
BVCBO  
Ic=100µA, IB=0  
V
Collector-Emitter  
Breakdown Voltage  
V
BVCEO  
BVEBO  
ICBO  
Ic=1mA, IB=0  
V
Emitter-Base Breakdown Voltage  
IE=100µA, Ic=0  
V
PZTA44  
VCB=400V, IE=0  
VCB=320V, IE=0  
VCE=400V, IB=0  
VCE=320V, IB=0  
VEB=4V, Ic=0  
0.1  
0.1  
0.5  
0.5  
0.1  
µA  
µA  
µA  
µA  
µA  
Collector Cut-OFF Current  
PZTA45  
PZTA44  
PZTA45  
Collector Cut-OFF Current  
Emitter Cut-OFF Current  
ICES  
IEBO  
VCE=10V, Ic=1mA  
VCE=10V, Ic=10mA  
VCE=10V, Ic=50mA  
VCE=10V, Ic=100mA  
Ic=1mA, IB=0.1mA  
Ic=10mA, IB=1mA  
Ic=50mA, IB=5mA  
40  
50  
45  
40  
240  
DC Current Gain (Note)  
hFE  
0.4  
0.5  
V
Collector-Emitter Saturation Voltage  
VCE(SAT)  
V
V
V
0.75  
0.75  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VBE(SAT) Ic=10mA, IB=1mA  
VCE=20V,Ic=10mA,  
fT  
50  
MHz  
pF  
f=100MHz  
Cob  
VCB=20V, IE=0, f=1MHz  
7
Note: Pulse test: Pulse Width<300µs, Duty Cycle<2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
www.unisonic.com.tw  
QW-R207-003,B  
PZTA44/45  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Fig.1 DC Current Gain  
Fig.2 Turn-ON Switching Time  
1
10  
140  
120  
100  
80  
V
CE=150V  
B
Ic/I =10  
Ta=25°C  
VBE(OFF)=4V  
VCE=10V  
0
60  
10  
40  
20  
0
T
f
-20  
-40  
Td  
-1  
10  
0
1
2
3
4
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic(mA)  
Collector Current, Ic (mA)  
Fig.4 Capacitance  
Fig.3 Turn-OFF Switching Time  
2
3
2
10  
V
CE=150V  
Ic/I =10  
Ta=25°C  
10  
10  
B
1
10  
Cib  
Ts  
0
10  
1
0
10  
10  
T
f
Cob  
-1  
10  
-1  
10  
0
1
2
3
0
1
2
10  
10  
10  
10  
10  
10  
10  
Collector Voltage(V)  
Collector Current, Ic (mA)  
Fig.5 ON Voltage  
Fig.6 Collector Saturation Region  
1.0  
0.8  
0.5  
0.4  
Ta=25°C  
VBE(SAT),Ic/I  
Ic=1mA  
B=10  
Ic=10mA  
Ic=50mA  
0.6  
0.3  
0.2  
VBE(ON),VCE=10V  
0.4  
0.2  
0
VCE(SAT),Ic/I  
B
=10  
0.1  
Ta=25°C  
0
-1  
10  
0
1
2
3
1
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic (mA)  
Base Current, IB (µA)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
www.unisonic.com.tw  
QW-R207-003,B  
PZTA44/45  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
Fig.7 High Frequency  
Current Gain  
Fig.8 Safe Operating Area  
Valid Duty  
2
4
10  
10  
VCE=10V  
f=10MHz  
Ta=25°C  
Cycle<10%  
1ms  
3
10  
1
1s  
0.1ms  
10  
T
c
=
2
2
5
T
a
°
C
10  
=
2
5
°C  
0
10  
1
10  
PZTA44  
-1  
10  
0
10  
-1  
10  
0
1
2
3
0
1
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic (mA)  
Collector-Emitter Voltage, VCE(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
www.unisonic.com.tw  
QW-R207-003,B  

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