S486_11 [UTC]
DUAL 100mW AUDIO POWER AMPLIFIER WITH STANDBY MODE; 具有待机模式双100mW的音频功率放大器
| 型号： | S486_11 |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL 100mW AUDIO POWER AMPLIFIER WITH STANDBY MODE |
| 文件： | 总12页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
S486
CMOS IC
DUAL 100mW AUDIO POWER
AMPLIFIER WITH STANDBY
MODE
DESCRIPTION
The UTC S486 is a dual power amplifier capable of delivering
typically 100mW per channel of continuous average power to an
8Ω load with 0.1% THD+N using a 5V power supply.
The UTC S486 features an externally controlled, low-power
consumption stand by mode. The UTC S486 exhibit a low
quiescent current of typically 1.8mA, allowing usage in portable
applications.
The unity-gain stable UTC S486 can be configured by external
gain-setting resistors.
FEATURES
* Operating voltage range VCC=2V ~ 5.5V
* Output power:
- 102mW @5V into 16Ω with 0.1% THD+N max (1kHz)
* Stand by mode available
* Low current consumption: 2.5mA max
* Click and pop reduction circuitry
* Unity-gain stable
* Short circuit protected
ORDERING INFORMATION
Ordering Number
Package
SOP-8
Packing
Lead Free
Halogen Free
S486L-S08-R
S486G-S08-R
Tape Reel
S486L-S08-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Lead Plating
(2) S08: SOP-8
(3) G: Halogen Free, L: Lead Free
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CMOS IC
PIN CONFIGURATION
8
7
6
5
1
2
3
4
OUT (1)
VIN (1)
VCC
OUT (2)
VIN (2)
BYPASS
GND
SHUTDOWN
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S486
CMOS IC
ABSOLUTE MAXIMUM RATING (Ta=25°С)
PARAMETER
SYMBOL
VCC
RATINGS
6
UNIT
V
Supply voltage (Note 2)
Input Voltage
VIN
-0.3V ~ VCC+0.3V
Continuous(Note 3)
0.71
V
Output Short Circuit to VCC or GND
Power Dissipation (TJ=150°С)
Junction Temperature
PD
TJ
W
°С
°С
°С
+150
Operating Temperature
TOPR
TSTG
-40 ~ +85
-65 ~ +150
Storage Temperature
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. All voltage values are measured with respect to the ground pin.
3. Attention must be paid to continuous power dissipation (VDD x 300mA). Exposure of the IC to a short circuit
for an extended time period is dramatically reducing product life expectancy.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
175
UNIT
Junction to Ambient
θJA
°С/W
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
VCC
RATINGS
UNIT
V
Supply Voltage
2 ~ 5.5
ACTIVE
1.5≤VSTB≤VCC
V
Standby Voltage Input
Load Resistor
VSTB
RL
STANDBY
GND≤VSTB≤0.4(Note)
V
≥16
400
100
150
Ω
RL = 16 ~ 100Ω
RL > 100Ω
pF
pF
℃/W
Load Capacitor
CL
Junction to Ambient
θJA
Note: The minimum current consumption (ISTB) is guaranteed at GND for the whole temperature range.
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S486
CMOS IC
ELECTRICAL CHARACTERISTICS (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +5V
PARAMETER
SYMBOL
VOUT
TEST CONDITIONS
VOL : RL = 32Ω
MIN TYP
0.45
MAX UNIT
0.5
VOH : RL = 32Ω
VOL : RL = 16Ω
4.45 4.52
0.6
Output Swing
V
0.7
V
OH : RL = 16Ω
4.2
4.35
1
Input Offset Voltage
Supply Current
VI(OFF) VICM = VCC/2
mV
ICC
No input signal, no load
No input signal, VSTB=GND, RL=32Ω
1.8
10
2.5
1000
200
mA
nA
nA
Stand By Current
Input Bias Current
ISTB
II(BIAS) VICM = VCC/2
90
THD+N≤1%,
Max Output Current
IOUT
106
115
mA
RL=16Ω connected between out and VCC/2
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
102
64
THD+N = 0.1% Max, F= 1kHz
THD+N = 1% Max, F= 1kHz
Output Power
POUT
mW
95
60
108
65
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
inputs grounded(GV=-1)(Note), RL≧16Ω,
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note), RL = 32Ω,
THD +N < 0.4%, 20Hz≤F≤20kHz
Total Harmonic Distortion +
Noise (Gv=-1)
0.3
0.3
THD+N
PSRR
SNR
%
Power Supply Rejection Ratio
Signal-to-Noise Ratio
53
80
58
dB
dB
103
Channel Separation,
GV=-1, F = 1kHz
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
80
83
72
79
1
Crosstalk
CT
CIN
dB
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
Input Capacitance
Gain Bandwidth Product
Slew Rate
pF
GBW RL = 32Ω
SR Unity Gain Inverting(RL = 16Ω)
1.1
0.4
MHz
V/µs
Note: Guaranteed by design and evaluation.
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S486
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +3.3V
PARAMETER
SYMBOL
VOUT
TEST CONDITIONS
VOL : RL = 32Ω
MIN TYP MAX UNIT
0.3
3
0.38
VOH : RL = 32Ω
VOL : RL = 16Ω
2.85
Output Swing
V
0.45 0.52
VOH : RL = 16Ω
2.68 2.85
Input Offset Voltage
Supply Current
VI(OFF) VICM = VCC/2
1
mV
mA
nA
ICC
No input signal, no load
No input signal, VSTB=GND, RL=32Ω
1.8
10
90
2.5
1000
200
Stand By Current
Input Bias Current
ISTB
II(BIAS) VICM = VCC/2
nA
THD +N≤1%,
Max Output Current
IOUT
64
75
mA
RL = 16Ω connected between out and VCC/2
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
38
26
THD+N = 0.1% Max, F= 1kHz
THD+N = 1% Max, F= 1kHz
Output Power
POUT
mW
36
23
42
28
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
inputs grounded (GV=-1)(Note 2), RL≧16Ω,
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note 2), RL = 32Ω,
THD +N < 0.4%, 20Hz≤F≤20kHz
Total Harmonic Distortion +
Noise (Gv=-1)
0.3
0.3
THD+N
PSRR
SNR
%
Power Supply Rejection Ratio
Signal-to-Noise Ratio
53
80
58
98
dB
dB
Channel Separation,
GV=-1, F = 1kHz
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
77
80
69
76
1
Crosstalk
CT
CIN
dB
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
Input Capacitance
Gain Bandwidth Product
Slew Rate
pF
GBw RL = 32Ω
SR Unity Gain Inverting( RL = 16Ω)
1.1
0.4
MHz
V/µs
Note 1. All electrical values are guaranteed with correlation measurements at 2V and 5V.
2. Guaranteed by design and evaluation.
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CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +2.5V
PARAMETER
SYMBOL
VOUT
TEST CONDITIONS
VOL : RL = 32Ω
MIN TYP MAX UNIT
0.25 0.32
VOH : RL = 32Ω
VOL : RL = 16Ω
2.14 2.25
V
Output Swing
0.35 0.45
VOH : RL = 16Ω
1.97 2.15
Input Offset Voltage
Supply Current
VI(OFF) VICM = VCC/2
1
mV
mA
nA
ICC
No input signal, no load
No input signal, VSTB=GND, RL=32Ω
1.7
10
90
2.5
1000
200
Stand By Current
Input Bias Current
ISTB
II(BIAS) VICM = VCC/2
nA
THD +N≤1%,
Max Output Current
IOUT
45
56
mA
RL = 16Ω connected between out and VCC/2
RL = 16Ω
RL = 32Ω
21
13
THD+N = 0.1% Max, F= 1kHz
THD+N = 1% Max, F= 1kHz
Output Power
POUT
mW
RL = 16Ω 17.5
RL = 32Ω 12.5
22
14
RL = 32Ω,POUT = 60mW, 20Hz≤F≤20kHz
RL = 16Ω, POUT = 90mW, 20Hz≤F≤20kHz
inputs grounded(GV=-1)(Note 2), RL≧16Ω,
Total Harmonic Distortion +
Noise (Gv=-1)
0.3
0.3
THD+N
PSRR
SNR
%
Power Supply Rejection Ratio
Signal-to-Noise Ratio
53
80
58
95
dB
dB
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, AV=-1)(Note 2), RL = 32Ω,
THD +N < 0.4%, 20Hz≤F≤20kHz
Channel Separation,
GV=-1, F = 1kHz
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
77
80
69
76
1
Crosstalk
CT
CIN
dB
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
Input Capacitance
Gain Bandwidth Product
Slew Rate
pF
GBP RL = 32Ω
SR Unity Gain Inverting (RL = 16Ω)
1.1
0.4
MHz
V/µs
Note 1. All electrical values are guaranteed with correlation measurements at 2V and 5V.
2. Guaranteed by design and evaluation.
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S486
CMOS IC
ELECTRICAL CHARACTERIST(Cont.) (Ta = 25°С, GND = 0V, unless otherwise specified)
For VCC = +2V
PARAMETER
SYMBOL
VOUT
TEST CONDITIONS
VOL : RL = 32Ω
MIN TYP MAX UNIT
0.24 0.29
VOH : RL = 32Ω
VOL : RL = 16Ω
1.67 1.73
V
Output Swing
0.33 0.41
VOH : RL = 16Ω
1.53 1.63
Input Offset Voltage
Supply Current
VI(OFF) VICM = VCC/2
1
mV
mA
nA
ICC
No input signal, no load
No input signal, VSTB=GND, RL=32Ω
1.7
10
90
2.5
1000
200
Stand By Current
Input Bias Current
ISTB
II(BIAS) VICM = VCC/2
nA
THD +N≤1%,
Max Output Current
IOUT
33
41
mA
RL=16Ω connected between out and VCC/2
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
12
8
THD+N = 0.1% Max, F= 1kHz
THD+N = 1% Max, F= 1kHz
Output Power
POUT
mW
9.5
7
13
9
RL = 32Ω, POUT= 60mW, 20Hz≤F≤20kHz
RL = 16Ω, POUT= 90mW, 20Hz≤F≤20kHz
inputs grounded (GV=-1)(Note) ,RL≧16Ω,
CB=1mF, F = 1kHz, VRIPPLE = 200mVPP
(A weighted, GV=-1)(Note), RL = 32Ω,
THD +N < 0.4%, 20Hz≤F≤20kHz
Total Harmonic Distortion +
Noise (Gv=-1)
0.3
0.3
THD+N
PSRR
SNR
%
Power Supply Rejection Ratio
Signal-to-Noise Ratio
52
80
57
93
dB
dB
Channel Separation,
GV=-1, F = 1kHz
RL = 16Ω
RL = 32Ω
RL = 16Ω
RL = 32Ω
77
80
69
76
1
Crosstalk
CT
CIN
dB
Channel Separation,
GV=-1, F = 20Hz ~ 20kHz
Input Capacitance
Gain Bandwidth Product
Slew Rate
pF
GBP RL = 32Ω
SR Unity Gain Inverting (RL = 16Ω)
1.1
0.4
MHz
V/µs
Note: Guaranteed by design and evaluation.
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S486
CMOS IC
TYPICAL APPLICATION CIRCUIT
VCC
Stdby level
threshold=0.9V
Stdby ctrl
RFEED1
20K
CS
1µF
8
VCC
Right In
CIN1
20K
220µF
2
5
ZL=32 Ω
1
7
Stdby
RIN1
330nF
COUT1
1K
1K
CB
3
UTC S486=Stdby
BIAS
COUT2
ZL=32 Ω
1µF
330nF
RIN2
6
220µF
GND
4
20K
CIN2
Left In
20K
RFEED2
COMPONENTS INFORMATION
Components
Functional Description
Inverting input resistor which sets the closed loop gain in conjunction with RFEED. This resistor
also forms a high pass filter with CIN (fc = 1 / (2 xπx RIN x CIN) .
RIN1, 2
CIN1, 2
Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminal.
Feedback resistor which sets the closed loop gain in conjunction with RIN.
AV= Closed Loop Gain= -RFEED/RIN.
RFEED1, 2
CS
CB
Supply Bypass capacitor which provides power supply filtering.
Bypass capacitor which provides half supply filtering.
Output coupling capacitor which blocks the DC voltage at the load input terminal.
This capacitor also forms a high pass filter with RL (fc = 1 / (2 xπx RL x COUT)).
COUT1, 2
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S486
CMOS IC
TYPICAL CHARACTERISTICS
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
Open Loop Gain and Phase vs
Frequency
Open Loop Gain and Phase vs
Frequency
180
180
VCC=5V
RL=32Ω
VCC=5V
RL=16Ω
Ta=25°С
80
80
160
140
120
100
80
160
140
120
100
80
Ta=25°С
Gain
60
40
20
0
60
40
20
0
Gain
Phase
Phase
60
60
40
40
20
0
20
0
-20
-20
-20
-40
-20
-40
0.1
1
10
100 1000 10000
0.1
1
10
100 1000 10000
Frequency (kHz)
Frequency (kHz)
Open Loop Gain and Phase vs
Frequency
Output Power vs Power Supply
Voltage
RL = 16Ω
F = 1kHz
W < 125kHz
Ta = 25°С
180
200
175
150
125
VCC=5V
RL=600Ω
Ta=25°С
80
160
140
120
100
80
B
60
40
20
0
Gain
THD+N=1%
100
75
Phase
60
THD+N=10%
40
50
25
0
THD+N=0.1%
20
0
-20
-20
-40
0.1
1
10
100 1000 10000
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCC(V)
Frequency (kHz)
Output Power vs Power Supply
Voltage
Power Dissipation vs Output Power
VCC=5V
F=1kHz
THD+N<1%
RL = 32Ω
F = 1kHz
BW < 125kHz
Ta = 25°С
80
60
40
100
75
THD+N=1%
RL=16Ω
THD+N=10%
50
25
0
RL=32Ω
20
0
THD+N=0.1%
0
20
40
60
80 100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCC(V)
Output Power (mW)
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CMOS IC
TYPICAL CHARACTERISTICS(Cont.)
Power Derating vs Ambiant
Temperature
Power Dissipation vs Output Power
1.0
0.9
0.8
0.7
15
10
5
VCC=2V
F=1kHz
THD+N<1%
RL=16Ω
0.6
0.5
0.4
0.3
0.2
0.1
0.0
RL=32Ω
0
6
8
10
0
12
2
4
0
25
50
75
100 125 150
Output Power (mW)
Ambiant Temperature (°С)
Current Consumption vs Power Supply
Voltage
Current Consumption vs Standby
Voltage
2.0
1.5
2.0
1.5
Ta=85°С
Ta=85°С
Ta=25°С
Ta=25°С Ta=-40°С
1.0
0.5
0.0
1.0
0.5
0.0
Ta=-40°С
VCC = 5V
No load
No load
1
2
3
4
5
0
1
2
3
4
5
0
VCC (V)
Standby Voltage (V)
Output Voltage Swing vs Power
Supply Voltage
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Ta=25°С
RL=32Ω
RL=16Ω
0.5
0.0
2.0
2.5
3.0 3.5
VCC (V)
4.0
4.5 5.0
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CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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