S8050G-X-T92-B [UTC]
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR;型号: | S8050G-X-T92-B |
厂家: | Unisonic Technologies |
描述: | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
文件: | 总4页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
S8050
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal
1
NPN transistor, designed for Class B push-pull audio amplifier
and general purpose applications.
TO-92
FEATURES
* Collector current up to 700mA
* Collector-Emitter voltage up to 20 V
* Complementary to S8550
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free Plating
S8050L-x-T92-B
S8050L-x-T92-K
Halogen Free
1
E
E
2
B
B
3
C
C
S8050G-x-T92-B
S8050G-x-T92-K
B: Base
TO-92
TO-92
Tape Box
Bulk
Note: Pin Assignment: E: Emitter
C: Collector
MARKING INFORMATION
PACKAGE
MARKING
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R201-013.D
S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
20
V
5
700
V
mA
W
Collector Dissipation(TA=25°C)
Junction Temperature
Storage Temperature
PC
1
TJ
150
°C
°C
TSTG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC=100A, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100μA, Ic=0
30
20
5
V
V
V
ICBO
IEBO
hFE1
hFE2
hFE3
VCB=30V, IE=0
1
μA
nA
Emitter Cut-Off Current
VEB=5V, IC=0
100
VCE=1V, IC=1mA
VCE=1V, IC=150 mA
VCE=1V, IC=500mA
100
120
40
DC Current Gain
400
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=500mA, IB=50mA
0.5
1.2
1.0
V
V
VBE
fT
VCE=1V, IC=10mA
V
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
100
MHz
pF
Cob
9.0
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R201-013.D
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S8050
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
IB=3.0mA
DC Current Gain
VCE=1V
103
102
0.5
0.4
IB=2.5mA
IB=2.0mA
0.3
0.2
IB=1.5mA
IB=1.0mA
101
100
IB=0.5mA
0.1
0
10-1
100
101
102
103
0
0.4
0.8 1.2
1.6 2.0
Collector-Emitter Voltage, VCE ( V)
Collector Current, Ic (mA)
Base-Emitter on Voltage
Saturation Voltage
104
103
102
101
Ic=10*IB
VCE=1V
VBE(SAT)
102
101
100
VCE(SAT)
101
10-1
10-1
100
102
103
0
0.2
0.4
0.6 0.8
1.0
Base-Emitter Voltage, VBE (V)
Collector Current, Ic (mA)
Current Gain-Bandwidth Product
VCE=10V
Collector Output Capacitance
103
102
103
f=1MHz
IE=0
102
101
100
101
100
100
101
102
103
100
101
102
103
Collector Current, Ic (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R201-013.D
www.unisonic.com.tw
S8050
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-013.D
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