S8550 [UTC]
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR; 低压大电流小信号PNP晶体管
| 型号： | S8550 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
DESCRIPTION
The UTC S8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
audio amplifier and general purpose applications.
1
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC S8050
TO-92
1:EMITTER 2:BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETERS
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
V
W
mA
°C
°C
-30
-20
-5
1
-700
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
Ic
Junction Temperature
Storage Temperature
Tj
TSTG
150
-65 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-30
-20
-5
V
V
V
µA
nA
Ic=-1mA,IB=0
IE=-100µA,Ic=0
VCB=-30V,IE=0
VEB=-5V,Ic=0
-1
Emitter Cut-Off Current
IEBO
-100
DC Current Gain(note)
hFE1
VCE=-1V,Ic=-1mA
VCE=-1V,Ic=-150 mA
VCE=-1V,Ic=-500mA
Ic=-500mA,IB=-50mA
Ic=500mA,IB=-50mA
VCE=-1V,Ic=-10mA
VCE=-10V,Ic=-50mA
VCB=10V,IE=0
100
120
40
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
110
9.0
400
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
-0.5
-1.2
-1.0
V
V
V
MHz
pF
fT
Cob
100
f=1MHz
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-014,A
UTC S8550
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
0.4
3
2
10
I
B
=3.0mA
=2.5mA
=2.0mA
10
VCE=1V
IB
VCE=1V
IB
1
10
2
10
0.3
0.2
I
B
=1.5mA
=1.0mA
IB
1
0
10
10
I
B
=0.5mA
0.1
0
0
-1
10
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
0
0.2
0.4
0.6
0.8
1.0
10
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
3
10
10
10
Ic=10*I
B
VCE=10V
f=1MHz
IE=0
3
2
2
10
VBE(sat)
10
10
2
1
1
10
10
10
VCE(sat)
1
0
0
10
10
10
3
0
1
2
3
0
1
2
3
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R201-014,A
相关型号：
S8550-AP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
S8550-B-BP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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