SB2202G-Q-TN3-T [UTC]
Small Signal Bipolar Transistor;
| 型号： | SB2202G-Q-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor 开关 晶体管 |
| 文件： | 总4页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD.
SB2202
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC SB2202 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and
voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
3
SB2202L-x-TM3-R
SB2202L-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TM3-R
SB2202G-x-TN3-T
SB2202G-x-TN3-R
TO-251
TO-252
TO-252
B
B
B
E
E
E
Tube
Tube
Tape Reel
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING INFORMATION
PACKAGE
MARKING
TO-220F
TO-251
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Copyright © 2014 Unisonic Technologies Co., LTD.
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QW-R209-020.B
SB2202
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
-40
V
V
V
A
-30
-5
-0.6
DC
IC
-3
Collector Current
A
PULSE
TA=25C
TC=25C
ICM
-7
1
Collector Dissipation
PC
W
10
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
C
C
TSTG
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified.)
PARAMETER
SYMBOL
VCE(sat)
VBE(sat)
ICBO
TEST CONDITIONS
IC =-2A, IB= -0.2A
MIN TYP MAX UNIT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
-0.3
-1.0
-0.5
-2.0
1
V
V
IC = -2A, IB= -0.2A
VCB= -30V, IE=0
mA
mA
Emitter Cut-Off Current
IEBO
VEB= -3V, IC =0
1
hFE1
hFE2
VCE= -2V, IC = -20mA
30
100
200
DC Current Gain(Note 1)
VCE= -2V, IC = -1A
400
Current Gain Bandwidth Product
Output Capacitance
fT
VCE= -5V, IC = -0.1A
80
45
MHz
pF
Cob
VCB= -10V, IE=0, f=1MHz
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-020.B
www.unisonic.com.tw
SB2202
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
operating areas
Derating curve of safe
Static characteristics
150
100
1.6
-IB 9mA
=
-IB=8mA
-IB=7mA
1.2
0.8
-IB=6mA
-IB=5mA
-IB=4mA
50
0
-IB=3mA
-IB=2mA
0.4
0
-IB=1mA
0
4
8
12
16
20
-40
0
40
80 120 150
-Collector
(
)
-Emitter Voltage,(V)
Case Temperature,TC °C
Power derating
capacitance
IE=0
Collector output
103
102
101
12
f=1MHz
8
4
0
100
1
-
2
-3
10
0
100
10
10
-
-40
40
80
120 150
Case Temperature, TC (°C)
-Collector-Base Voltage(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-020.B
www.unisonic.com.tw
SB2202
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (cont.)
DC current gain
Saturation Voltage
104
103
102
101
VCE=-2V
VBE(SAT)
103
102
VBE(SAT)
101
100
100
100
101
102
103
C (mA)
104
100
101
102
103
104
-Collector current, I
-Collector Current, I
C (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-020.B
www.unisonic.com.tw
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