SFR1020CG-TF1-T [UTC]
Rectifier Diode,;
| 型号： | SFR1020CG-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Rectifier Diode, |
| 文件： | 总4页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
SFR1020C
DIODE
ULTRA-FAST RECOVERY
RECTIFIER DIODES
1
1
DESCRIPTION
TO-220F
TO-220
UTC SFR1020C is dual center tap rectifier suited for high
frequency Switching Mode PowerSupplies applications.
FEATURES
* High Surge Current Capability
* Suited For Smps, DC ~ DC Converters
* Low Forward And Reverse Recovery Time
* Low Losses
1
1
TO-220F2
TO-220F1
CONNECTION DIAGRAM
A1
K
A2
ORDERING INFORMATION
Order Number
Pin Assignment
2
Package
Packing
Lead Free
Halogen Free
1
3
SFR1020CL-TA3-T
SFR1020CL-TF1-T
SFR1020CL-TF2-T
SFR1020CL-TF3-T
SFR1020CG-TA3-T
SFR1020CG-TF1-T
SFR1020CG-TF2-T
SFR1020CG-TF3-T
TO-220
TO-220F1
TO-220F2
TO-220F
A1
A1
A1
A1
K
K
K
K
A2
A2
A2
A2
Tube
Tube
Tube
Tube
Note: Pin Assignment: A: Anode K: Cathode
SFR1020CG-TA3-T
(1)Packing Type
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
SFR1020C
L: Lead Free
G: Halogen Free
Date Code
Lot Code
1
www.unisonic.com.tw
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 4
QW-R601-004.D
SFR1020C
DIODE
ABSOLUTE MAXIMUM RATING (limiting values, per leg)
PARAMETER
SYMBOL
VRRM
RATINGS
200
UNIT
V
Repetitive Peak Reverse Voltage
RMS Forward Current
IF(RMS)
10
A
Average Forward Current δ= 0.5
TC=125°C (Per leg)
IF(AV)
5
A
Surge Non Repetitive Forward Current, tp=10ms Sinusoidal
Storage temperature range
IFSM
50
A
TSTG
-60 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C~85°C.
ELECTRICAL CHARACTERISTICS (per leg)
PARAMETER
SYMBOL
IR
TEST CONDITIONS
MIN
TYP
0.69
MAX
50
UNIT
μA
mA
V
TJ = 25°C
Reverse Leakage Current
(Note1)
VR = VRRM
TJ = 100°C
TJ = 25°C
TJ = 125°C
0.6
IF = 5 A
IF = 5 A
0.9
Forward Voltage Drop
(Note2)
VF
0.74
V
Note1. tp = 5 ms, δ< 2 %
2. tp = 380 μs, δ< 2 %
To evaluate the conduction losses use the following equation: P = 0.78× IF(AV) + 0.042 × IF2(RMS)
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
trr
TEST CONDITIONS
TJ= 25°C, IF = 0.5A, VF = 30V, IR = 1A
TJ = 25°C, IF= 1A, dIF/dt = 50 A/μs
VR =30V
MIN
TYP
MAX
40
UNIT
ns
Reverse Recovery Time
Formard Recovery Time
Peak Forward Voltage
tfr
33
3
ns
V
VFP
TJ= 25°C, IF= 1A, dIF/dt = 50 A/μs
Note: When diodes 1 and 2 are used simultaneously :
∆TJ (diode 1) = P(diode 1)×Rth(j-c)( per leg) + P(diode 2) × Rth(c)
UNISONICTECHNOLOGIESCO.,LTD
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SFR1020C
DIODE
TYPICAL CHARACTERISTICS
Average Forward Power Dissipation Versus
Average Forward Current (Per Diode)
Peak Current Versus Form Factor (Per Diode)
7
50
45
T
6
1
.
0
2
40
35
.
=
5
0
.
0
δ
=
δ
δ= tp/T
5
4
3
2
1
0
tp
P=5W
=
δ
δ=0.05
30
δ=1
25
20
P=7.5W
15
10
5
P=10W
T
P=2.5W
δ=tp/T
tp
0
0.0 0.51.0 1.52.0 2.53.03.5 4.04.55.0 5.5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
6.0
1.0
Form Factor,δ
Average Forward Current,IF (av) (A)
Average Forward Current Versus Ambient
Non Repetitive Surge Peak Forward
Current Versus Overload Duration
Temperature
70
60
50
6
Rth(j-a)=Rth(j-c)
5
4
Tc=25°C
40
30
20
10
0
Rth(j-a)=15°C/W
3
Tc=125°C
2
T
IM
1
t
δ=tp/T
tp
δ=0.5
0
IE-3
IE-2
IE-1
IE+0
0
25 50
75 100 125
150
Average Forward Current, Ta (°C)
Overload Duration, t (s)
Relative Variation Of Thermal Versus Impedance
Junction To Case Versus Pulse Duration
Forward Voltage Drop Versus Forward Current
(Maximum Values, Per Diode)
50.0
1.0
δ=0.5
10.0
TJ=125°C
δ=0.2
TJ=25°C
1.0
δ=0.1
T
Single pulse
δ=tp/T
tp
0.1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage Drop, VFM (V)
IE-3
IE-2
IE-1
IE+0
Pulse Duration,t (s)
UNISONICTECHNOLOGIESCO.,LTD
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SFR1020C
DIODE
TYPICAL CHARACTERISTICS (Cont.)
Reverse Recovery Charges
Versus Dif/Dt (Per Diode)
Junction Capacitance Versus Reverse Voltage
Applied (Typical Values, Per Diode)
200
50
F=1MHz
IF = IF (av)
90% confidence
TJ=125°C
40
100
50
TJ =25°C
30
20
10
20
10
10
20
50
dIF/dt (A/μs)
1
10
100 200
100 200 500
Voltage Applied, VR (V)
Dynamic Parameters Versus Junction
Temperature (Per Diode)
Peak Reverse Recovery Current Versus Dif/
Dt (Per Diode)
20.0
1.25
1.00
0.75
0.50
0.25
IF=IF (av)
90% confidence
TJ=125°C
10.0
IRM
1.0
Qrr
0.1
0
25
50
75
10
20
50
dIF/dt (A/μs)
100 125 150
100 200 500
Junction Temperature, TJ (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONICTECHNOLOGIESCO.,LTD
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相关型号：
SFR1020L
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UTC
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