SM2LZ47G-TF3-T [UTC]

TRIAC,;
SM2LZ47G-TF3-T
型号: SM2LZ47G-TF3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

TRIAC,

三端双向交流开关
文件: 总3页 (文件大小:166K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
SM2LZ47  
Preliminary  
TRIAC  
2A TRIACS  
DESCRIPTION  
The UTC SM2LZ47 is a 2A Triac, it uses UTC’s advanced  
technology to provide customers with high critical rate of rise of  
off-state voltage at communication, high repetitive peak off-state  
voltage and high R.M.S. on-state current, etc.  
The UTC SM2LZ47 is suitable for AC power control applications,  
etc.  
FEATURES  
* High R.M.S. OnState Current: 2A  
* High Repetitive Peak OffState Voltage: 800V  
* High Critical Rate of Rise of Off-State Voltage at  
Communication(Min.=5V/μs)  
SYMBOL  
MT2  
G
MT1  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
TO-220F  
Packing  
Tube  
Lead Free  
Halogen Free  
SM2LZ47G-TF3-T  
1
2
3
SM2LZ47L-TF3-T  
MT1 MT2  
G
Note: Pin Assignment: MT1: MT1 MT2: MT2 G: GATE  
MARKING INFORMATION  
PACKAGE  
MARKING  
TO-220F  
www.unisonic.com.tw  
1 of 3  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R401-049.a  
SM2LZ47  
Preliminary  
TRIAC  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VDRM  
RATINGS  
UNIT  
V
Repetitive Peak Off-State Voltages  
800  
2
R. M. S On-State Current (Full Sine Waveform)  
IT(RMS)  
A
50Hz  
60Hz  
8
A
Non Repetitive Peak One Cycle Surge  
On-State Current  
ITSM  
I2t  
8.8  
A
I2t Limit Value  
0.32  
50  
A2s  
A/µs  
W
Critical Rate of Rise of On-State Current (Note 1)  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Voltage  
dI/dt  
PGM  
PG(AV)  
VFGM  
IGM  
3
0.3  
W
10  
V
Peak Gate Current  
1.6  
A
Isolation Voltage (AC, t=1min.)  
Junction Temperature  
VISOL  
TJ  
1500  
-40~125  
-40~125  
V
°C  
°C  
Storage Temperature  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
dI/dt test conditionVDRM= 400V, ITM 3A, tgw0μs, tgr250ns, igp=IGT×2.0  
2.  
THERMAL RESISTANCES  
PARAMETER  
SYMBOL  
RATINGS  
58  
UNIT  
°C/W  
Junction to Ambient (AC)  
θJA  
ELECTRICAL CHARACTERISTICS (TA=25˚C)  
PARAMETER  
SYMBOL  
IDRM  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Repetitive Peak Off-State Current  
VDRM=800V  
20  
1.5  
1.5  
1.5  
10  
µA  
T2+ G+  
T2+ G-  
T2- G-  
T2+ G+  
T2+ G-  
T2- G-  
Gate Trigger Voltage  
VGT  
VD=12V, RL=20Ω  
V
Gate Trigger Current  
IGT  
VD=12V, RL=20Ω  
10  
mA  
10  
Peak On-State Voltage  
Gate Non-Trigger Voltage  
Holding Current  
VTM  
VGD  
IH  
ITM=3A  
2.0  
V
V
VD=800V, TC=125°C  
VD=12V, ITM=1A  
0.2  
5
10  
mA  
Critical Rate of Rise of Off-State  
Voltage  
VDRM=800V, TJ=125°C, Exponential  
dV/dt  
500  
V/µs  
V/µs  
Rise  
Critical Rate of Rise of Off-State  
Voltage at Communication  
VDRM=400V, TJ=125°C,  
(dV/dt)c  
(dI/dt)c=-0.5A/ms  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R401-049.a  
www.unisonic.com.tw  
SM2LZ47  
Preliminary  
TRIAC  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R401-049.a  
www.unisonic.com.tw  

相关型号:

SM2M64DT-10

Synchronous DRAM Module, 2MX64, 5ns, CMOS, PDMA168
RAMTRON

SM2M64DT-7.5

Synchronous DRAM Module, 2MX64, 4.5ns, CMOS, PDMA168
RAMTRON

SM2M64SDT-10

Cache DRAM Module, 2MX8, CMOS, SODIMM-144
RAMTRON

SM2M64SDT-6

Cache DRAM Module, 2MX8, CMOS, SODIMM-144
RAMTRON

SM2M64SDT-7.5

Cache DRAM Module, 2MX8, CMOS, SODIMM-144
RAMTRON

SM2M72DT-10

Synchronous DRAM Module, 2MX72, 5ns, CMOS
RAMTRON

SM2M72DT-7.5

Synchronous DRAM Module, 2MX72, 4.5ns, CMOS
RAMTRON

SM2S-05

RU Series - General Purpose Relays
ETC

SM2S-05C

RU Series - General Purpose Relays
ETC

SM2T

Transient Voltage Suppressor: TRANSIL ⑩
STMICROELECTR