TC200 [UTC]
EPITAXIAL PLANAR NPN TRANSISTOR;
| 型号： | TC200 |
| 厂家： | 
Unisonic Technologies |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR 局域网 |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TC200
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
EPITAXIAL PLANAR NPN
TRANSISTOR
DESCRIPTION
The UTC TC200 is an epitaxial planar NPN transistor; it uses
UTC’s advanced technology to provide the customers with high DC
current gain and low collector-emitter saturation voltage, etc.
The UTC TC200 is suitable for general purpose and switching
application, etc.
FEATURES
* High DC current gain
* Low Collector-Emitter Saturation Voltage
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
E
E
2
C
C
3
B
B
TC200L-x-T92-B
TC200L-x-T92-K
TC200G-x-T92-B
TC200G-x-T92-K
TO-92
TO-92
Tape Box
Bulk
Note: Pin Assignment: C: Collector B: Base
E: Emitter
TC200L-x-T92-B
(1)Packing Type
(1) B: Tape Box, K: Bulk
(2) T92: TO-92
(2)Package Type
(3)Rank
(3) refer to CLASSIFICATION OF hFE1
(4) L: Lead Free, G: Halogen Free
(4)Halogen Free
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R201-087.a
TC200
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
45
V
5
V
500
mA
mA
mW
°C
Emitter Current
IE
-500
625
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
TJ
150
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=50V, IE=0
MIN
TYP MAX UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
0.1
0.1
µA
µA
IEBO
VEB=5V, IC=0
hFE1
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=100mA, IB=10mA
VCE=2V, IC=200mA
VCE=6V, IC=20mA
70
25
240
DC Current Gain
hFE2
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
0.25
1.0
V
V
Current Gain Bandwidth Product
Output Capacitance
fT
300
7.0
MHz
pF
Cob
VCB=6V, IE=0, f=1MHz
CLASSIFICATION OF hFE1
RANK
hFE1
O
Y
70 ~ 140
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-087.a
www.unisonic.com.tw
TC200
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-087.a
www.unisonic.com.tw
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