TF215 [UTC]
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR; N沟道结型场效应晶体管
| 型号： | TF215 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TF215
Preliminary
JFET
N-CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
DESCRIPTION
The UTC TF215 is an N-channel junction field effect
transistor, and it can be specially used in electronic condenser
microphone.
FEATURES
* Good voltage characteristics and transient characteristics.
* Halogen Free
ORDERING INFORMATION
Pin Assignment
Ordering Number
TF215G-x-AN3-R
Package
SOT-523
Packing
1
2
3
S
D
G
Tape Reel
MARKING
TF215-D4
TF215-D5
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-096.a
TF215
Preliminary
JFET
ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Gate to Drain Voltage
Gate Current
VGDO
IG
-20
10
mA
mA
mW
°С
Drain Current
ID
1
Power Dissipation
Junction Temperature
Storage Temperature
PD
100
TJ
150
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
BVGDO
VGS(OFF)
IDSS
TEST CONDITIONS
IG=-100μA
MIN TYP MAX UNIT
G-D Breakdown Voltage
Gate Off Voltage
-20
V
V
VDS=5.0V, ID=1μA
VDS=5.0V, VGS=0
-0.2 -0.6 -1.0
Drain Current
140
0.8
350
μA
mS
pF
pF
dB
dB
dB
MΩ
Ω
Forward Transfer Admittance
Input Capacitance
|YFS|
CISS
CRSS
GV
△GVV
△GVf
ZIN
VDS=2.0V, VGS=0, f=1KHz
VDS=5.0V, VGS=0, f=1MHz
VDS=5.0V, VGS=0, f=1MHz
VIN=10mV, f=1KHz
VIN=10mV, f=1KHz VCC=4.5Æ1.5V
f=1KHz~110Hz
1.2
3.5
Reverse Transfer Capacitance
Voltage Gain
0.65
-3.0
Reduced Voltage Characteristic
Frequency Characteristic
Input Resistance
-1.2 -3.5
-1.0
f=1KHz
25
Output Resistance
ZO
f=1KHz
1000
1.2
Total Harmonic Distortion
Output Noise Voltage
THD
VIN=30mV, f=1KHz
VIN=0, A Curve
%
VNO
-110 dB
CLASSIFICATION OF IDSS
RANK
D4
D5
210-350
RANGE
140-240
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-096.a
www.unisonic.com.tw
TF215
Preliminary
JFET
TEST CIRCUIT (Ta=25°С)
VCC=4.5V
VCC=1.5V
1Kꢀ
33µF
15pF
A
B
OSC
THD
V VTVM
1Kꢀ
For Output
Impedance
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-096.a
www.unisonic.com.tw
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