TIP107G-TQ2-T [UTC]

Power Bipolar Transistor,;
TIP107G-TQ2-T
型号: TIP107G-TQ2-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Power Bipolar Transistor,

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
TIP107  
PNP SILICON TRANSISTOR  
PNP EPITAXIAL TRANSISTOR  
1
1
DESCRIPTION  
TO-220  
TO-263  
TO-220F  
The UTC TIP107 is designed for using in general purpose  
amplifier and switching applications.  
FEATURES  
* Low VCE(SAT)  
* High Current Gain  
1
1
TO-252  
* Complementary to TIP102  
1
1
TO-126S  
Packing  
TO-126  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Lead Free  
Halogen Free  
1
B
B
B
B
B
E
E
2
3
E
E
E
E
E
B
B
TIP107L-TA3-T  
TIP107L-TF3-T  
TIP107L-TN3-R  
TIP107L-TQ2-T  
TIP107L-TQ2-R  
TIP107L-T60-K  
TIP107L-T6S-K  
TIP107G-TA3-T  
TIP107G-TF3-T  
TIP107G-TN3-R  
TIP107G-TQ2-T  
TIP107G-TQ2-R  
TIP107G-T60-K  
TIP107G-T6S-K  
C: Collector  
TO-220  
TO-220F  
TO-252  
TO-263  
TO-263  
TO-126  
TO-126S  
C
C
C
C
C
C
C
Tube  
Tube  
Tape Reel  
Tube  
Tape Reel  
Bulk  
Bulk  
Note: Pin Assignment: B: Base  
E: Emitter  
TIP107G-TA3-T  
(1) R: Tape Reel, T: Tube, K: Bulk  
(1)Packing Type  
(2) TA3: TO-220, TF3: TO-220F, TN3: TO-252  
TQ2: TO-263, T60: TO-126, T6S: TO-126S  
(3) G: Halogen Free and Lead Free, L: Lead Free  
(2)Package Type  
(3)Green Package  
MARKING  
TO-220 / TO-220F / TO-252 / TO-263  
TO-126 / TO-126S  
UTC  
UTC  
L: Lead Free  
TIP1 0 7  
Date Code  
TIP107  
G: Halogen Free  
L: Lead Free  
Lot Code  
Date Code  
G: Halogen Free  
1
1
www.unisonic.com.tw  
Copyright © 2019 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-023.E  
TIP107  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
-100  
-100  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCES  
V
VEBO  
V
DC  
-8  
A
IC  
ICP  
IB  
Collector Current  
Base Current  
Pulse  
-15  
A
A
DC  
-1  
TO-220/TO-263  
TO-220F  
80  
W
Collector Power Dissipation  
PC  
TO-252  
41  
10  
W
W
TO-126/TO-126S  
Junction Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
TSTG  
-65 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCEO(SUS)  
ICBO  
TEST CONDITIONS  
IC=-30mA, IB=0A  
MIN TYP MAX UNIT  
V
Collector-Emitter Sustaining Voltage  
Collector-Base Cut-Off Current  
Collector-Emitter Cut-Off Current  
Emitter-Base Cut-Off Current  
ON CHARACTERISTICS  
-100  
µA  
µA  
mA  
VCB=-100V, IE=0A  
VCE=-50V, IB=0A  
VEB=-5V, IC=0A  
-50  
50  
-2  
ICEO  
IEBO  
hFE1  
hFE2  
VCE=-4V, IC=-3A  
VCE=-4V, IC=-8A  
IC=-3A, IB=-6mA  
IC=-8A, IB=-80mA  
VCE=-4V, IC=-8A  
1000  
200  
20000  
DC Current Gain  
V
V
V
-2  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
VBE(ON)  
-2.5  
-2.8  
Base-Emitter ON Voltage  
SMALL-SIGNAL CHARACTERISTICS  
Output Capacitance  
Cob  
pF  
VCB=-10V, IE=0A, f=0.1MHZ  
300  
UNISONICTECHNOLOGIESCO.,LTD  
2 of 4  
QW-R203-023.E  
www.unisonic.com.tw  
TIP107  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Staic Characteristics  
DC Current Gain  
VCE=-4V  
-5  
-4  
-3  
-2  
-1  
0
10k  
IB=-1000uA  
IB=-900uA  
IB=-800uA  
IB=-700uA  
IB=-600uA  
IB=-500uA  
1k  
IB=-400uA  
IB=-300uA  
IB=-200uA  
-4  
100  
-0.1  
-0  
-1  
-2  
-3  
-5  
-1  
-10  
Collector-Emitter Voltage, VCE (V)  
Collecter Current, IC (A)  
Base-Emitter vs Collector-Emitter  
Saturation Voltage  
Collector Output Capacitance  
-100k  
-10k  
-1k  
10k  
1k  
F=0.1MHZ  
IE=0  
IC=500IB  
100  
10  
1
VBE(SAT)  
VCE(SAT)  
-100  
-0.1  
-1  
-10  
-100  
-0.1  
-1  
-10  
-100  
Collecter Current, IC (A)  
Collecter-Base Voltage, VCB (V)  
Safe Operating Area  
-100  
-10  
1ms  
1
0
0
μ
D
C
s
5
m
-1  
s
-0.1  
-0.01  
-0.1  
-1  
-10  
-100  
Collector-Emitter Voltage, VCE (V)  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 4  
QW-R203-023.E  
www.unisonic.com.tw  
TIP107  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 4  
QW-R203-023.E  
www.unisonic.com.tw  

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