TIP112L-TA3-T [UTC]
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR; NPN外延硅达林顿晶体管型号: | TIP112L-TA3-T |
厂家: | Unisonic Technologies |
描述: | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
文件: | 总4页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TIP112
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC TIP112 is designed for such applications as: DC/DC
converters supply line switching, battery charger, LCD backlighting,
peripheral drivers, Driver in low supply voltage applications (e.g.
lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
motors).
FEATURES
* High DC current gain : hFE = 1000 @ VCE =4V, IC=1A (Min)
* Low collector-emitter saturation voltage
EQUIVALENT TEST (R1≈10kΩ, R2≈0.6kΩ)
C
B
R1
R2
E
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
B
B
B
2
3
B
E
E
E
TIP112G-T60-K
TIP112G-TA3-T
TIP112G-TN3-R
TIP112G-TN3-T
Bulk
Tube
TIP112L-T60-K
TIP112L-TA3-T
TIP112L-TN3-R
TIP112L-TN3-T
TO-126
TO-220
TO-252
TO-252
C
C
C
C
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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TIP112
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
100
V
V
V
100
5
DC
2
Collector Current
Base Current (DC)
A
Peak
ICM
4
50
IB
mA
TO-126
TO-220
TO-252
10
Collector Dissipation
PC
40
W
15
Junction Temperature
Storage Temperature
TJ
150
-65~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
100
TYP
MAX UNIT
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
VCEO(SUS) IC=30mA, IB=0A
VCE(SAT) IC=2A, IB=8mA
VBE(ON) VCE=4V, IC=2A
2.5
2.8
1
V
ICBO
ICEO
IEBO
VCB=100V, IE=0A
VCE=50V, VB=0A
VEB=5V, IC=0A
mA
mA
mA
2
2
VCE=4V, IC=1A
1000
500
DC Current Gain
hFE
VCE=4V, IC=2A
Collector Capacitance
COB
VCB=10V, IE=0A, f=0.1MHz
100
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TIP112
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
IB=500uA
DC Current Gain
VCE=4V
2.0
10000
1000
100
IB=300uA
1.8 IB=450uA
IB=350uA
IB=400uA
1.6
IB=250uA
IB=200uA
1.4
1.2
1.0
0.8
0.6
0.4
IB=150uA
0.2
0.0
10
2
3
4
5
0.1
1
10
0
1
0.01
Collector-Emitter Voltage, VCE (V)
Collector Current, IC (A)
Safe Operating Area
Power Derating
10
80
70
60
50
40
5mS
1mS
DC
1
30
20
10
0
0.1
100
Collector-Emitter Voltage, VCE (V)
25
100 125
150
175
1
10
0
50
75
Case Temperature, TC (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TIP112
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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