TIP127G-T60-K [UTC]

PNP EPITAXIAL TRANSISTOR; PNP晶体管外延
TIP127G-T60-K
型号: TIP127G-T60-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

PNP EPITAXIAL TRANSISTOR
PNP晶体管外延

晶体 晶体管
文件: 总4页 (文件大小:212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
TIP127  
PNP SILICON TRANSISTOR  
PNP EPITAXIAL TRANSISTOR  
„
DESCRIPTION  
The UTC TIP127 is a PNP epitaxial transistor, designed for  
use in general purpose amplifier low-speed switching applications.  
„
EQUIVALENT TEST (R1 8k, R2 0.12k)  
C
B
R1  
R2  
E
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
B
2
C
C
3
B
E
TIP127L-T60-K  
TIP127L-TA3-T  
TIP127G-T60-K  
TIP127G-TA3-T  
TO-126  
TO-220  
Bulk  
Tube  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-005,D  
TIP127  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
100  
100  
V
5
V
5
40  
A
TO-126  
TO-220  
W
W
°C  
°C  
°C  
Power Dissipation  
PD  
65  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
150  
TOPR  
TSTG  
-20 ~ +85  
-55 ~ +150  
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.  
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.  
„
ELECTRICAL CHARACTERISTICS  
(Ta =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IC=100mA  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector Cut-Off Current  
BVCEO  
ICBO  
100  
V
200 uA  
500 uA  
VCB=100V  
Collector-Cut-Off Current  
ICEO  
VCE=50V  
Emitter Cut-Off Current  
IEBO  
VEB=5V  
2
2
mA  
V
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(SAT)1  
VCE(SAT)2  
VBE(ON)  
IC=3A, IB=12mA  
IC=5A, IB=20mA  
VCE=3V, IC=3A  
IC=500mA, VCE=3V  
IC=3A, VCE=3V  
4
V
2.5  
V
DC Current Gain  
hFE  
1
K
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R203-005,D  
www.unisonic.com.tw  
TIP127  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R203-005,D  
www.unisonic.com.tw  
TIP127  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS(Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R203-005,D  
www.unisonic.com.tw  

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