TIP31CG-T60-B [UTC]

NPN EXPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管
TIP31CG-T60-B
型号: TIP31CG-T60-B
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN EXPITAXIAL PLANAR TRANSISTOR
NPN外延平面晶体管

晶体 晶体管 功率双极晶体管 开关 局域网
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UNISONIC TECHNOLOGIES CO., LTD  
TIP31C  
NPN EXPITAXIAL TRANSISTOR  
NPN EXPITAXIAL PLANAR  
TRANSISTOR  
„
DESCRIPTION  
The UTC TIP31C is a NPN epitaxial planar transistor,  
designed for using in general purpose amplifier and switching  
applications.  
„
FEATURES  
* Complement to TIP32C.  
Lead-free:  
TIP31CL  
Halogen-free:TIP31CG  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
TIP31CG-T60-B  
TIP31CG-TA3-T  
TIP31CG-TN3-R  
1
B
B
B
2
C
C
C
3
E
E
E
TIP31C-T60-B  
TIP31C-TA3-T  
TIP31C-TN3-R  
TIP31CL-T60-B  
TIP31CL-TA3-T  
TIP31CL-TN3-R  
TO-126  
TO-220  
TO-252  
Bulk  
Tube  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R203-010.D  
TIP31C  
NPN EXPITAXIAL TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
Collector-Base Voltage  
100  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
100  
V
VEBO  
5
V
DC  
3
A
Collector Current  
Base Current  
IC  
IB  
Pulse  
5
A
1
10  
A
TO-126  
TO-220  
TO-252  
W
W
W
°C  
°C  
Collector Dissipation (TC=25°C)  
PC  
40  
15  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-65 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TC=25°C)  
PARAMETER SYMBOL TEST CONDITIONS  
BVCEO IC=30mA, IB=0  
MIN  
100  
TYP  
MAX UNIT  
V
Collector Emitter Sustaining Voltage (Note)  
Collector Cutoff Current  
ICES  
ICEO  
IEBO  
VCB=100V, VEB=0  
VCE=60V, IB=0  
VBE=5V, IC=0  
200  
0.3  
1
μA  
mA  
mA  
V
Collector Cutoff Current  
Emitter Cutoff Current  
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=3A, IB=375mA  
1.2  
1.8  
Base-Emitter On Voltage (Note)  
VBE(ON) IC=3A, VCE=4V  
V
hFE1  
hFE2  
fT  
IC=1A, VCE=4V  
25  
10  
3
DC Current Gain (Note)  
IC=3A, VCE=4V  
50  
Current Gain Bandwidth Product  
IC=0.5A, VCE=10V f=1MHz  
MHz  
Note: Pulse Test: PW300μs, Duty Cycle2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R203-010.D  
www.unisonic.com.tw  
TIP31C  
NPN EXPITAXIAL TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Safe Operating Area  
Ic MAX. (Pulse)  
Power Derating  
TO-220  
10  
40  
30  
5.0  
3.0  
Ic MAX.  
(Continuous)  
1.0  
20  
10  
TO-252  
0.5  
0.3  
TO-126  
0.1  
4
10  
50  
100  
200  
30  
0
150  
50  
100  
200  
Collector-Emitter Voltage, VCE (V)  
Case Temperature, TC(°C)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R203-010.D  
www.unisonic.com.tw  

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