TIP41CL-Q-A-TF3-T [UTC]
Power Bipolar Transistor,;
| 型号： | TIP41CL-Q-A-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, |
| 文件： | 总3页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TIP41C-Q
NPN PLANAR TRANSISTOR
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC TIP41C-Q is a NPN expitaxial planar transistor,
designed for using in general purpose amplifier and switching
applications.
FEATURE
* Complement to TIP42C
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
TIP41CL-Q-x-TA3-T
TIP41CL-Q-x-TF3-T
TIP41CG-Q-x-TA3-T
TIP41CG-Q-x-TF3-T
TO-220
Tube
Tube
TO-220F
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
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Copyright © 2019 Unisonic Technologies Co., Ltd
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QW-R203-057.A
TIP41C-Q
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATING
UNIT
V
Collector Base Voltage
Collector to Emitter Voltage
Emitter-Base Voltage
100
VCEO
100
V
VEBO
5
V
DC
6
A
Collector Current
Base Current
IC
IB
Pulse
10
A
2
A
TO-220
TO-220F
TO-220
TO-220F
65
TC=25C
TA=25C
W
W
22
Collector Dissipation
PC
2
0.7
Junction Temperature
Storage Temperature
TJ
150
C
C
TSTG
-65 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Emitter Base Breakdown Voltage
Collector Base Breakdown Voltage
Collector Emitter Sustaining Voltage (Note)
Collector Cutoff Current
BVEBO IE=100μA, IC=0
BVCBO IC=100μA, IE=0
BVCEO IC=30mA, IB=0
5
V
V
100
100
V
ICEO
ICES
IEBO
VCE=60V, IB=0
VCE=100V, VEB=0
VEB=5V, IC=0
0.7
400
1
mA
μA
mA
V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note)
Base-Emitter On Voltage (Note)
VCE(SAT) IC=6A, IB=600mA
VBE(ON) IC=6A, VCE=4V
1.5
2.0
V
hFE1
hFE2
fT
IC=300mA, VCE=4V
30
15
3
DC Current Gain (Note)
IC=3A, VCE=4V
75
Current Gain Bandwidth Product
VCE=10V, IC=500mA, f=1MHz
MHz
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE2
RANK
A
B
C
RANGE
15~30
28~48
45~75
UNISONIC TECHNOLOGIES CO., LTD
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QW-R203-057.A
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TIP41C-Q
NPN PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
1000
100
10000
1000
IC=10IE
VCE=4V
VBE(Sat)
10
1
100
10
VCE(Sat)
10
0.01
0.1
10
0.01
0.1
1
1
0.001
0.001
Collector Current, IC (A)
Collector Current, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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