UD4606G-S08-R [UTC]
DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL); 双增强型N沟道/ P沟道）
| 型号： | UD4606G-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL) |
| 文件： | 总9页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UD4606
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
DIP-8
The UTC UD4606 provides excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
complementary MOSFETs may be help to form a level shifted high
side switch and also for lots of other applications.
FEATURES
*N-Channel: 30V/6.9A
SOP-8
RDS(ON) = 22.5 mΩ (typ.) @VGS =10V
RDS(ON) = 34.5 mΩ (typ.) @VGS=4.5V
*P-Channel: -30V/-6A
RDS(ON) = 28 mΩ (typ.) @VGS= -10V
RDS(ON) = 44 mΩ (typ.) @VGS= -4.5V
*Reliable and rugged
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free Plating
UD4606L-D08-T
UD4606L-S08-R
Halogen Free
1
2
3
4
5
6
7
8
UD4606G-D08-T
UD4606G-S08-R
DIP-8
S1 G1 S2 G2 D2 D2 D1 D1
Tube
SOP-8
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
www.unisonic.com.tw
1 of 8
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-144.C
UD4606
Power MOSFET
PIN CONFIGURATION
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UD4606
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
Continuous Drain Current (Note2)
Pulsed Drain Current (Note2)
6.9
A
IDM
30
A
DIP-8
2.5
W
W
°С
°С
Power Dissipation
PD
SOP-8
2
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
P-CHANNEL
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 2)
Pulsed Drain Current (Note 2)
-30
±20
V
-6
A
IDM
-30
A
DIP-8
2.5
W
W
°С
°С
Power Dissipation
PD
SOP-8
2
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in 2 pad area, t≤10sec
THERMAL DATA
PARAMETER
Junction to Ambient (Note)
SYMBOL
MIN
TYP
74
MAX
110
80
UNIT
°С/W
°С/W
DIP-8
θJA
SOP-8
67
Note: Surface Mounted on 1in 2 pad area, t≤10sec
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UD4606
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
V
1
uA
nA
IGSS
100
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=10V, ID=6.9A
VGS=4.5V, ID=5A
1
1.9
3
V
22.5
34.5
28
42
mꢀ
mꢀ
Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
680
102
77
pF
pF
pF
V
GS=0V,VDS=15V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
4.6
4.1
ns
ns
VDS=15V, VGS=10V, RG=3ꢀ,
RL=2.2ꢀ
Turn-OFF Delay Time
20.6
5.2
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
13.8
1.82
3.2
nC
nC
nC
VDS=15V, VGS=10V, ID=6.9A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current (Note3)
Reverse Recovery Time
VSD
IS
IS=1A, VGS=0V
0.76
1
3
V
A
tRR
QRR
16.5
7.8
ns
nC
IDS=6.9A, dI/dt=100A/μs
Reverse Recovery Charge
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
V
-1
uA
IGSS
±100 nA
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
-1.2
-2
28
44
-2.4
35
V
mꢀ
mꢀ
Drain-Source On-State Resistance (Note2)
58
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
920
190
122
pF
pF
pF
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
7.7
5.7
ns
ns
VDS=-15V, VGS=-10V,
RG=3ꢀ, RL=2.7ꢀ
Turn-OFF Delay Time
20.2
9.5
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
18.5
2.7
nC
nC
nC
V
DS=-15V, VGS=-10V,
QGS
QGD
ID=-6A
Gate-Drain Charge
4.5
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UD4606
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current (Note3)
Reverse Recovery Time
VSD
IS
IS=-1A, VGS=0V
-0.76
-1
V
A
-4.2
tRR
QRR
20
ns
nC
I
DS=-6A, dI/dt=100A/μs
Reverse Recovery Charge
8.8
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%.
3. Surface Mounted on 1in 2 pad area, t≤10sec.
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UD4606
Power MOSFET
TYPICAL CHARACTERISTICS
N-CHANNEL
On-Resistance vs. Drain Current
and Gate Voltage
Capacitance Characteristics
60
50
40
30
20
1000
900
800
700
600
500
400
300
200
100
0
f=1MHZ
VGS=0V
CISS
VGS=4.5V
VGS=10V
COSS
CRSS
10
0
0
5
25
30
5
10
15
20
10
15
20
Drain Current,ID (A)
Drain to Source Voltage,VDS (V)
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UD4606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Single Pulse Power Rating Junction-
to-Ambient
Gate- Charge Characteristics
40
30
20
10
0
10
8
VDS=15V
ID=6.9A
TJ(Max)=150℃
TA=25℃
6
4
2
0
0
2
4
6
12
0.001 0.01
0.1
1
10
100 1000
8
10
14
Gate Charge,QG (nC)
Pulse Width (s)
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UD4606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
P-CHANNEL
Transfer Characteristics
VDS=-5V
On-Region Characteristics
30
25
30
-6V
-4.5V
-10V
-5V
25
20
15
10
5
20
15
10
-4V
-3.5V
125℃
5
0
VGS=-3V
25℃
0
1
0
2
3
4
5
0 0.5
1
1.5
2
2.5
3
3.5 4 4.5 5
Drain to Source Voltage,-VDS (V)
Gate to Source Voltage,-VGS (V)
On-Resistance vs. Drain Current
and Gate Voltage
Capacitance Characteristics
60
55
1500
1250
1000
750
500
250
0
50
45
40
35
VGS=-4.5V
CISS
VGS=-10V
30
25
COSS
CRSS
20
15
10
0
5
10
15
20
30
0
5
10
15
25
20
25
Drain Current,-ID (A)
Drain to Source Voltage,-VDS (V)
UNISONIC TECHNOLOGES O., LTD
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UD4606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Single Pulse Power Rating Junction-
to-Ambient
Gate-Charge Characteristics
40
30
20
10
10
8
VDS=-15V
ID=-6A
TJ(Max)=150℃
TA=25℃
6
4
2
0
0
0
4
8
16
20
1
12
0.001 0.01 0.1
10
100 1000
Gate Charge,-QG (nC)
Pulse Width (s)
Normalized Maximum Transient
Thermal Impedance
Maximum Forward Biased Safe
Operating Area
100.0
10.0
10
1
TJ(Max)=150℃
TA=25℃
In descending order
D=TON/T
RDS(ON) Limited
D=0.5,0.3,0.1,0.05,0.
TJ,PK=TA+PDM.Z
02,0.01,single pulse
θJA.RθJA
100μs
1ms
10μs
R
θJA=62.5℃/W
10ms
0.1s
PD
1.0
0.1
1s
TON
10s
T
Single Pulse
DC
0.01
0.1
1000
0.00010.001
0.00001
0.1
1
10 100
0.01
0.1
1
10
100
Drain to Source Voltage,-VDS (V)
Pulse Width (s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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