UD4809 [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UD4809 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UD4809
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
This UD4809 N-Channel MOSFET is produced using UTC
advanced process which has been tailored to make the on-state
resistance minimum and yet maintain low gate charge for
superior switching performance especially. The UD4809 is well
suited for where low in-line power loss is needed in a very small
outline surface mount package, such as low voltage and battery
powered applications.
FEATURES
* Low RDS(ON)
*Pb-free plating product number: UD4809L
* Low capacitance
* Optimized gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
3
S
S
UD4809-TN3-R
UD4809-TN3-T
UD4809L-TN3-R
UD4809L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-177.A
UD4809
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
Continuous Drain Current (Note 3)
Drain to Source dv/dt
9.0
A
V/ns
W
dv/dt
PD
6.0
Power Dissipation (Note 3)
Junction Temperature
1.3
℃
TJ
+150
-55 ~ +150
℃
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
116
2.9
UNIT
℃/W
℃/W
Junction-to-Ambient (Note 3)
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0 V, ID =250µA
30
V
VDS =24V, VGS =0 V
VDS =0 V, VGS = ±20V
1.0
µA
nA
IGSS
±100
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10~11.5 V
1.5
2.5
9.0
V
ID =30 A
ID =15 A
ID =30 A
ID =15 A
7.0
7.0
12
mΩ
Static Drain-Source On-Resistance
(Note 2)
RDS(ON)
14
VGS =4.5 V
mΩ
11
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1456
315
V
DS =12 V, VGS =0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
200
tD(ON)
tR
tD(OFF)
tF
tD(ON)
tR
tD(OFF)
tF
12.3
21.3
15.1
5.3
VGS=4.5V,VDS=15V, ID =15A,
RG =3.0ꢀ
ns
ns
Turn-OFF Delay Time
Turn-OFF Fall-Time
Turn-ON Delay Time
Turn-ON Rise Time
7.0
VGS=11.5V,VDS=15V, ID =15A,
RG =3.0ꢀ
22.7
25.3
2.8
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
QG(TOT)
QG(TH)
QGS
QGD
11
13
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
2.5
VDS =15V, VGS =4.5V, ID =30A
nC
4.8
5.0
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
IS=30A,VGS=0V
0.95
1.2
43
V
A
Source Current (Body Diode)
Reverse Recovery Time
tRR
QRR
VGS = 0 V, dIs/dt= 100 A/ s,
IS = 30 A
19.5
9.2
ns
nC
Reverse Recovery Time
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Surface-mounted on FR4 board using the minimum recommended pad size.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-177.A
www.unisonic.com.tw
UD4809
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-177.A
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UD4809
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Resistive Switching Time Variation
vs. Gate Resistance
Body-Diode Characteristics
VGS=0V
1000
30
25
20
15
10
VDD=15V
ID=30A
VGS=11.5V
TJ=25℃
100
td(off)
tr
10
1
td(on)
tf
5
0
1
10
100
0.5
0.7
0.8
0.9
1.0
0.6
Gate Resistance,RG (OHMS)
Body Diode Forward Voltage,VSD (V)
Maximum Avalanche Energy vs. Starting
Junction Temperature
Avalanche Characteristics
120
100
10
1
ID=15A
25℃
100℃
100
80
125℃
60
40
20
0
0.1
1
25
50
75
100
125 150
175
10
100
1000
Junction Temperature,TJ (℃)
Pulse Width (μs)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-177.A
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UD4809
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Thermal Response
1.0
D=0.5
0.2
0.1
0.05
0.1
R
θJC(t)=r(t)RθJC
0.02
0.01
P(pk)
D Curves Apply for
Power Pulse Train
t1
Shown Read Time at t1
TJ(pk)-TC=P(pk)RθJC(t)
Single Pulse
t2
Duty Cyclr,D=t1/t2
1.0E+00
1.0E+01
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Time,t (μs)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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