UD606L-TN5-T [UTC]
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL); 双增强模式（ N沟道/ P沟道）
| 型号： | UD606L-TN5-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) |
| 文件： | 总9页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UD606
Power MOSFET
DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
1
The UD606 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology MOSFETs. The
UD606 may be used in H-bridge, inverters and other applications.
TO-252-5
FEATURES
* N-Channel: 40V/8A
R
R
DS(ON) = 33mΩ @ VGS =10V
DS(ON) = 47mΩ @ VGS= 4.5V
* P-Channel: -40V/-8A
*Pb-free plating product number: UD606L
R
R
DS(ON) = 50mΩ @ VGS= -10V
DS(ON) = 70mΩ @ VGS= -4.5V
* Super high dense cell design
* Reliable and rugged
SYMBOL
(3)
D1/D2
(5)
G2
(2)
G1
S2
(4)
S1
(1)
N-Channel
P-Channel
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
UD606L-TN5-R
UD606L-TN5-T
1
2
3
4
5
UD606-TN5-R
UD606-TN5-T
TO-252-5
TO-252-5
S1
S1
G1 D1/D2
G1 D1/D2
S2
S2
G2
G2
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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QW-R502-169.A
UD606
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
N-Channel:
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
TC=25°C
TC=25°C
8
30
A
IDM
A
PD
2
W
℃
℃
Junction Temperature
Storage Temperature
P-Channel:
TJ
+175
-55 ~ +175
TSTG
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-40
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note3)
Pulsed Drain Current (Note3)
Power Dissipation
±20
V
TC=25°C
TC=25°C
-8
A
IDM
-30
A
PD
2.5
W
℃
℃
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
50
MAX
60
UNIT
℃/W
℃/W
N-Channel
P-Channel
Junction to Ambient
θJA
40
50
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=250uA
VDS=32V, VGS=0V
VDS=0V, VGS=±20V
40
V
1
uA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250uA
VGS=10V, ID=8A
1
2.3
27
37
3
V
33
47
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
VGS=4.5V, ID=6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
404
95
pF
pF
pF
VGS=0V,VDS=20V,f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
37
tD(ON)
tR
tD(OFF)
tF
3.5
6
ns
ns
VDS=20V, VGS=10V, RG=3Ω,
RL=2.5Ω
Turn-OFF Delay Time
13.2
3.5
9.2
1.6
2.6
ns
Turn-OFF Fall Time
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
nC
nC
nC
VDS=20V, VGS=10V, ID=8A
QGS
QGD
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current
Reverse Recovery Time
VSD
IS
IS=1A, VGS=0V
0.76
1
8
V
A
tRR
QRR
22.9
18.3
ns
nC
IF=8A, dI/dt=100A/µs
Reverse Recovery Charge
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UD606
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=-250uA
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-40
V
-1
uA
IGSS
±100 nA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250uA
VGS=-10V, ID=-8A
-1
-1.8
35
-3
50
70
V
mΩ
mΩ
Drain-Source On-State Resistance (Note2)
VGS=-4.5V, ID=-4A
55
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
657
143
63
pF
pF
pF
VGS=0V,VDS=-20V,f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
Turn-ON Rise Time
tD(ON)
tR
tD(OFF)
tF
8
ns
ns
VDS=-20V, VGS=-10V,
RG=3Ω, RL=2.5Ω
12.2
24
Turn-OFF Delay Time
ns
Turn-OFF Fall Time
12.5
14.1
2.2
ns
Total Gate Charge (Note2)
Gate-Source Charge
QG
nC
nC
nC
VDS=-20V, VGS=-10V, ID=-8A
QGS
QGD
Gate-Drain Charge
4.1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
Diode Continuous Forward Current
Reverse Recovery Time
VSD
IS
IS=-1A, VGS=0V
-0.75
-1
-8
V
A
tRR
QRR
23.2
18.2
ns
nC
IF=-8A, dI/dt=100A/µs
Reverse Recovery Charge
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
3. Surface Mounted on 1in 2 pad area, t≤10sec.
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS
N-CHANNEL
Body-Diode Characteristics
On-Resisitance vs. Gate-Source Voltage
ID=8A
1.0E+01
100
90
1.0E+00
1.0E-01
125℃
80
70
60
50
1.0E-02
1.0E-03
125℃
25℃
40
30
25℃
1.0E-04
1.0E-05
20
10
2
0.6
0.8
0.0
0.2
0.4
1.0
1.2
6
10
4
8
Gate Source Voltage, VGS(V)
Source Drain Voltage, VSD(V)
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Maximum Transient Thermal Impedance
10
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,Single Pulse
1
D=TON/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=60℃/W
T
R
0.1
PD
TON
Single Pulse
0.0001
T
0.01
10
100
0.00001
0.001
0.01
0.1
1
Pulse Width (s)
P-CHANNEL:
On-Resistance Characteristics
-5V
Transient Characteristics
VDS=-5V
30
25
25
20
-10V -6V
-4.5V
20
15
10
VGS=-4V
-3.5V
15
10
125℃
25℃
5
0
5
0
-3V
4
0
1
2
3
4
5
0
1
2
3
5
Drain-Source Voltage, -VDS(V)
Gate-Source Voltage, -VGS(V)
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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UD606
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
On-Resistance vs. Drain Current and
Gate Voltage
80
70
60
50
VGS=-4.5V
40
VGS=-10V
30
20
0
4
8
12
Drain Current, -ID(A)
16
20
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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