UDN302_15 [UTC]
P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET;
| 型号： | UDN302_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET |
| 文件： | 总4页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UDN302
Power MOSFET
P-CHANNEL 2.5V SPECIFIED
POWERTRENCH MOSFET
DESCRIPTION
The UDN302 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON)=55mΩ @ VGS=-4.5V
* RDS(ON)=80mΩ @ VGS=-2.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
UDN302G-AE3-R
1
2
3
UDN302L-AE3-R
S
G
D
Tape Reel
MARKING
NC03
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-278.B
UDN302
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-20
±12
V
Continuous Drain Current
Pulsed Drain Current
-2.4
A
IDM
-10
A
Maximum Power Dissipation
Junction Temperature
Storage Temperature
PD
0.5
W
℃
℃
TJ
+150
-55 ~ +150
TSTG
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
250
75
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0V, ID=-250µA
ID=-250µA,
Referenced to 25°C
VDS=-16V, VGS=0V
VGS=±12V, VDS=0V
-20
V
ΔBVDSS/ΔTJ
-12
mV/°C
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
IDSS
IGSS
-1
µA
±100 nA
VGS(TH)
VDS =VGS, ID =-250µA
ID=-250 µA,
Referenced to 25°C
VGS=-4.5V, ID=-2.4A
-0.6 -1.0 -1.5
3
V
Gate Threshold Voltage Temperature
Coefficient
ΔVGS(TH)/ΔTJ
mV/°C
44
64
55
80
Static Drain-Source On-Resistance
RDS(ON)
mΩ
VGS=-2.5V, ID=-2A
On-State Drain Current
ID(ON)
gFS
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-2.4A
-10
A
S
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
10
CISS
COSS
CRSS
882
211
112
pF
pF
pF
VDS=-10V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note)
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
ns
ns
ns
9
2
14
V
V
DS=-10V, ID=-2.4A,
GS=-4.5V
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
3
13
11
25
15
23
20
40
27
VDD=-10V, ID=-1A, VGS=-4.5V
RG=6Ω
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
VGS=0V, IS=-0.42A (Note)
-0.7 -1.2
-0.42
V
A
Maximum Body-Diode Continuous Current
Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-278.B
www.unisonic.com.tw
UDN302
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
400
350
300
250
200
150
100
50
300
250
200
150
100
50
0
0
1.0
0
0.2
0.4
0.6
0.8
0
10
20
30
40
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source On-State
Resistance Characteristics
3.0
2.5
2.0
ID=-2.4A
VGS=-4.5V
ID=-2A
1.5
1.0
V
GS=-2.5V
0.5
0
0
200
50
100
150
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-278.B
www.unisonic.com.tw
UDN302
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-278.B
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明