UF1404G-TA3-T [UTC]
162A, 40V N-CHANNEL POWER MOSFET; 162A ， 40V N沟道功率MOSFET
| 型号： | UF1404G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 162A, 40V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF1404
Preliminary
Power MOSFET
162A, 40V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF1404 is a N-channel enhancement power MOSFET
using UTC’s advanced technology to provide the customers with
perfect RDS(ON) and high switching speed.
The UTC UF1404 is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts,
etc.
FEATURES
* RDS(ON)= 4mΩ @ VGS=10V, ID=95A
* High Switching Speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-220
Packing
Tube
Halogen Free
UF1404G-TA3-T
D: Drain S: Source
1
2
3
UF1404L-TA3-T
G
D
S
Note: Pin Assignment: G: Gate
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-641.a
UF1404
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
40
±20
VGSS
V
TC=25°C
TC=100°C
TC=25°C
162 (Note 5)
115 (Note 5)
650
A
Continuous (VGS=10V)
ID
Drain Current
A
Pulsed (Note 2)
IDM
IAR
A
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
95
A
EAS
EAR
dv/dt
PD
519
mJ
mJ
V/ns
W
Avalanche Energy
20
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TC=25°C)
Junction Temperature
5.0
200
TJ
+150
°C
°C
Storage Temperature
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating: pulse width limited by maximum junction temperature
3. Starting TJ=25°C, L=0.12mH, RG=25ꢀ, IAS=95A
4. ISD≤95A, di/dt≤150A/µs, VDD≤BVDSS, TJ≤175°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
RATINGS
62
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.625
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UF1404
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
40
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=1mA
0.036
V/°C
µA
VDS=40V, VGS=0V
20
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
V
DS=32V, VGS=0V, TJ=150°C
VGS=+20V
GS=-20V
250 µA
+200 nA
-200 nA
Forward
Reverse
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
2.0
4.0
4
V
3.5
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=95A (Note 2)
mꢀ
CISS
COSS
CRSS
7.36
1.68
0.24
nF
nF
nF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
160 200 nC
ID=95A, VDS=32V, VGS=10V
(Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
35
42
nC
nC
ns
ns
ns
ns
60
17
VDD=20V, ID=95A, RG=2.5ꢀ,
RD=0.21ꢀ (Note 2)
140
72
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
26
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Internal Drain Inductance
LD
4.5
7.5
nH
nH
Between lead,
(0.25in.) from package
and center of die contact
6
mm
Internal Source Inductance
LS
Maximum Body-Diode Continuous Current
(Note 4)
IS
MOSFET symbol showing
the integral reverse p-n
junction diode.
162
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
650
1.3
A
V
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
tRR
IS=95A, VGS=0V, TJ=25°C (Note 2)
IF=95A, di/dt=100A/µs,
TJ=25°C (Note 2)
71
110 ns
QRR
180 270 µC
Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature
2. Pulse width≤300µs, Duty cycle≤2%
3. COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80%
VDSS
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation current
is 75A
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UF1404
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
RG
RD
VDS
VGS
10V
10%
VGS
DUT
tR
td(OFF)
td(ON)
tON
tF
tOFF
Resistive Switching Waveforms
Resistive Switching Test Circuit
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UF1404
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UF1404
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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