UF2N30ZL-TNS-T [UTC]
Power Field-Effect Transistor;
| 型号： | UF2N30ZL-TNS-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总3页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF2N30Z
Power MOSFET
2A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF2N30Z is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers with a
minimum on-state resistance, low gate charge and superior switching
performance.
FEATURES
* RDS(ON)<2.5Ω @ VGS=10V
* High switching speed
* Typically 4nC low gate charge
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
-
Halogen Free
1
2
D
D
D
3
S
S
S
UF2N30ZG-AA3-R
UF2N30ZG-TN3-T
UF2N30ZG-TNS-T
SOT-223
TO-251
G
G
G
Tape Reel
Tube
UF2N30ZL-TN3-T
UF2N30ZL-TNS-T
Note: Pin Assignment: G: Gate
TO-251S
Tube
D: Drain
S: Source
MARKING INFORMATION
SOT-223
TO-251 / TO-251S
www.unisonic.com.tw
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-761.D
UF2N30Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
300
±20
V
Continuous
Pulsed
2
A
Continuous Drain Current
Avalanche Energy
IDM
8
A
EAS
52
mJ
SOT-223
0.8
Power Dissipation (TC=25°C)
PD
W
TO-251/TO-251S
1.13
+150
-55~+150
Junction Temperature
TJ
°C
°C
Storage Temperature Range
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=300V
GS=+20V, VDS=0V
300
V
1
µA
µA
µA
Forward
Reverse
V
10
-10
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
ID=250µA
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=10V, ID=2A
2.5
ꢀ
CISS
COSS
CRSS
200
90
pF
pF
pF
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
30
QG
QGS
QGD
tD(ON)
tR
4
6
nC
nC
nC
ns
ns
ns
ns
VDD=50V, ID=1.3A,
IG=100µA, VGS=10V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
0.64
1.6
29
35
110 125
VDD=30V, ID=0.5A,
RG=25ꢀ, VGS=0~10V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
50
99
56
120
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
2
8
A
A
V
ISM
VSD
IS=2A
1.3
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-761.D
www.unisonic.com.tw
UF2N30Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
0
50
0
0
70
140
210
280
350
0
0.7
1.4 2.1
2.8 3.5 4.2
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-761.D
www.unisonic.com.tw
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