UF3205G-TQ2-T [UTC]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | UF3205G-TQ2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总6页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF3205
Power MOSFET
110A, 55V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF3205 uses advanced technology to provide
excellent RDS(ON), fast switching, low gate charge, and extremely
efficient. This device is suitable for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
FEATURES
* RDS(ON)<8mΩ @VGS=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
UF3205L-TA3-T
UF3205L-TQ2-T
UF3205L-TQ2-R
UF3205G-TA3-T
UF3205G-TQ2-T
UF3205G-TQ2-R
TO-220
TO-263
TO-263
Tube
Tube
G
G
G
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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UF3205
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VGSS
VDSS
ID
RATINGS
±20
UNIT
V
Gate-Source Voltage
Drain-Source Voltage
55
V
Continuous (VGS=10V)
Pulsed (Note 2)
110
Drain Current
A
A
IDM
390
Avalanche Current (Note 2)
Repetitive(Note 2)
Single Pulsed(Note 3)
IAR
62
EAR
EAS
PD
20
Avalanche Energy
mJ
1050
156
Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
W
°C
°C
TJ
+175
-55 ~ +175
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=138μH, RG=25Ω, IAS=62A
THERMAL DATA
PARAMETER
SYMBOL
MAX
62.5
0.8
UNIT
°C/W
θJA
Junction to Ambient
TO-220
TO-263
Junction to Case
θJC
°C/W
0.7
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
V
V
GS=0V, ID=250μA
55
μA
nA
VDS=55V,VGS=0V
25
IGSS
VGS=±20V, VDS=0V
±100
△BVDSS/△TJ
V/°C
Reference to 25°C, ID=1mA
0.057
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
V
V
DS=VGS, ID=250μA
2.0
4.0
8.0
mΩ
VGS=10V, ID=62A
CISS
COSS
CRSS
pF
pF
pF
3247
781
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
211
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
146
35
54
Gate Source Charge
Gate Drain Charge
VDS=44V, ID=62A, VGS=10V
Turn-ON Delay Time
14
101
50
Turn-ON Rise Time
Turn-OFF Delay Time
ns
ns
VDD=28V, ID=62A, RG=4.5Ω,
tD(OFF)
tF
VGS=10V (Note)
Turn-OFF Fall-Time
65
ns
Internal Drain Inductance
Internal Source Inductance
LD
4.5
7.5
nH
nH
LS
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UF3205
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
V
A
IS=62A ,VGS=0V
1.3
Maximum Continuous Drain-Source Diode
Forward Current
IS
110
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
390
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width≤400μs; duty cycle≤2%.
tRR
ns
69
143
104
215
IF=62A, dI/dt=100A/μs (Note)
QRR
nC
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UF3205
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
P.W.
D=
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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UF3205
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
2A Switching Test Circuit
2B Switching Waveforms
QG
VGS
QGS
QGD
VD
Charge
3A Gate Charge Test Circuit
3B Gate Charge Waveform
BVDSS
ID(t)
VDS(t)
VDD
IAS
Time
tp
4B Unclamped Inductive Switching Waveforms
4A Unclamped Inductive Switching Test Circuit
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UF3205
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
10 20 30 40 50 60 70
1.0 1.5
2.0 2.5 3.0
0.5
0
Drain-Source Breakdown Voltage, BVDSS(V)
Gate Threshold Voltage, VTH (V)
Drain Current vs.
Source to Drain Voltage
Drain-Source On-State Resistance
Characteristics
20
12
10
16
12
8
8
6
4
2
4
0
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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