UF3710L-TA3-T [UTC]
57A, 100V N-CHANNEL POWER MOSFET; 57A ， 100V N沟道功率MOSFET
| 型号： | UF3710L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 57A, 100V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UF3710
Power MOSFET
57A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF3710 uses advanced process technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or
in PWM applications.
FEATURES
* RDS(ON) = 23mΩ @VGS = 10 V
* Ultra low gate charge ( typical 130 nC )
* Low reverse transfer Capacitance ( CRSS = typical 72 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
UF3710L-TA3-T
UF3710L-TQ2-T
UF3710L-TQ2-R
UF3710G-TA3-T
UF3710G-TQ2-T
UF3710G-TQ2-R
TO-220
TO-263
TO-263
Tube
Tube
G
G
G
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 6
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R203-036.E
UF3710
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VGSS
VDSS
ID
RATINGS
UNIT
V
V
Gate-Source Voltage
Drain-Source Voltage
±20
100
Continuous (VGS=10V)
Pulsed (Note 2)
57
230
Drain Current
A
A
IDM
Avalanche Current (Note 2)
IAR
57
Repetitive(Note 2)
Single Pulsed(Note 3)
EAR
EAS
PD
20
Avalanche Energy
mJ
1060 (Note 4)
165
Power Dissipation
W
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V
4. This is a typical value at device destruction and represents operation outside rated limits.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
RATINGS
62
UNIT
℃/W
℃/W
θJC
0.75
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=100V, VGS=0V
VGS=±20V, VDS=0V
100
V
25
μA
IGSS
±100 nA
V/°C
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=1mμA,Referenced to 25℃
0.13
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=28A (Note)
VDS=25V, ID=28 A
2.0
32
4.0
23
V
mΩ
S
CISS
COSS
CRSS
3130
410
72
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f =1MHz
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R203-036.E
www.unisonic.com.tw
UF3710
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
130 nC
Gate Source Charge
Gate Drain Charge
V
DS=80V, ID=28A, VGS=10V
26
43
nC
nC
ns
ns
ns
ns
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
12
58
45
47
VDD=50V, ID=28A, RG=2.5Ω
GS=10V (Note)
V
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=28A, VGS=0V (Note)
1.2
57
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
MOSFET symbol showing
the integral reverse P-N
junction diode.
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
230
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
trr
140 220
ns
IF=28A, dI/dt=100A/μs (Note)
QRR
670 1010 nC
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R203-036.E
www.unisonic.com.tw
UF3710
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R203-036.E
www.unisonic.com.tw
UF3710
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
VGS
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Gate Charge Waveform
RG
Gate Charge Test Circuit
RD
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R203-036.E
www.unisonic.com.tw
UF3710
Power MOSFET
TYPICAL CHARACTERISTICS
Drian Current vs
Drain Source Breakdown Voltage
Drian Current vs Gate Threshold Voltage
400
350
300
250
800
700
600
500
200
150
100
400
300
200
50
0
100
0
5
0
160
1
2
3
4
0
40
80
120
140
Gate Threshold Voltage. VTH(V)
Drain Source Breakdown Voltage,BVDS(V)
Drain - Source On-State Resistance
Characteristics
Drain Current. Source to Drain Voltage
10
25
20
ID=28A
VGS=10V
8
6
4
15
10
5
0
2
0
0
100
200
300
400
500
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD(V)
Drain to Source Voltage VDS(mV)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R203-036.E
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明